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Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs
ShaoJun Ma Yunpeng Wang Hassanet Sodabanlu Kentaroh Watanabe Masakazu Sugiyama Yoshiaki Nakano 《Journal of Crystal Growth》2012,352(1):245-248
Using high-accuracy in situ curvature measurement during growth of InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) by metal organic vapor phase epitaxy (MOVPE), we have successfully clarified the effect of hetero-interfaces on strain control in InGaAs/GaAsP strain-balanced MQWs. By analyzing curvature transients and X-ray diffraction (XRD) fringe patterns, we found that an inadequate gas-switching sequence induces unintended atomic content at the interfaces between InGaAs and GaAsP and then influences the average strain of the structure. Through considering the atomic characteristics and measuring the reflectance anisotropy transient during growth, it has been revealed that the optimized stabilization time for arsenic and phosphorus mixture before GaAsP barrier growth should be longer than 3 s at 610 °C. 相似文献
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Jung-Seung Yang Hassanet Sodabanlu Masakazu Sugiyama Yoshiaki Nakano Yukihiro Shimogaki 《Journal of Crystal Growth》2011,314(1):252-257
Intersubband transition (ISBT) at 1.55 μm in AlN/GaN multi quantum wells (MQWs) was realized by metal organic vapor phase epitaxy (MOVPE) using the pulse injection (PI) method to grow GaN well layers at 770 °C. It was shown that a main factor for shifting ISBT wavelength to shorter region to cover 1.55 μm and improving ISBT properties of MQWs is the growth temperature of MQWs. Best structural and ISBT properties are observed at low growth temperature of 770 °C in this study. Carbon incorporation level in GaN layer grown by the PI method (PI-GaN) showed one order smaller value compared with that by the conventional continuous method. Moreover, further decrease in growth temperature to 770 °C did not show significant increase in carbon incorporation in PI-GaN layer. It clearly indicates that the PI method is very effective in reducing carbon concentration in GaN layer, especially at low temperature region. The low carbon concentration of 4×1018 cm?3 released by the PI method was indispensable for realizing enough carrier concentration of 1.6×1019 cm?3 to achieve strong ISBT at 1.55 μm. 相似文献
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