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1.
A planar metamaterial structure consisting of two layers of split-ring resonator (SRR) arrays is demonstrated to form the
image of a point source with subwavelength resolution. The source frequency is swept through the resonance gap of the metamaterial
layers and the lateral field intensity distribution is recorded on the transmission side of the metamaterial. When the source
is tuned to the resonance frequency of SRRs, the metamaterial acts as a high permeability medium and a distinct image with
subwavelength resolution in the lateral direction is obtained. Increasing the distance between the individual SRR layers reduces
the interlayer coupling, and the intensity and spatial resolution of the image decrease rapidly. 相似文献
2.
Polat Narin Ece Kutlu-Narin Gokhan Atmaca Beyza Sarikavak-Lisesivdin Sefer B. Lisesivdin Ekmel Ozbay 《Surface and interface analysis : SIA》2022,54(5):576-583
Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 108 cm−2 for Sample B with a lattice-matched In0.17Al0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs). 相似文献
3.
Yusuf Öztürk Asım Egemen Yılmaz Evrim Çolak Ekmel Özbay 《Photonics and Nanostructures》2012,10(4):624-631
Planar metamaterials, which have incident to normal plane excitation unlike SRR-type structures and that are easily fabricated in multilayer form, have received great interest in recent years. In this paper, one-dimensional and polarization independent circular fishnet metamaterials and their equivalent discontinuous slab-pair modeling for tuning resonance frequencies are introduced. After the numerical and experimental demonstration of the inclusions, the standard retrieval characterization methods and the correspondent/related backward-wave propagation observation are realized in order to check the physical explanation mentioned in the paper. In addition, a detailed phase analysis is performed in order to demonstrate the application of the suggested structure as a phase compensator. 相似文献
4.
Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures 总被引:1,自引:0,他引:1
M. Bayindir S. Tanriseven A. Aydinli E. Ozbay 《Applied Physics A: Materials Science & Processing》2001,72(1):125-127
We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry–Perot
(FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride
and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from
optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity
and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed
that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely
low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction
of the tight-binding approximation.
Received: 8 March 2001 / Accepted: 17 March 2001 / Published online: 23 May 2001 相似文献
5.
Shen NH Massaouti M Gokkavas M Manceau JM Ozbay E Kafesaki M Koschny T Tzortzakis S Soukoulis CM 《Physical review letters》2011,106(3):037403
We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime. 相似文献
6.
We studied the properties of electromagnetic waves that were emitted from a source placed inside a left-handed medium based on a two-dimensional labyrinth. While the arguments of geometrical optics suggest that the field emitted from the source would be focused outside the left-handed medium no matter where the source was placed, our results proved the contrary. We found that the field emitted from the source was focused outside the left-handed medium when the source was placed inside the medium at a certain distance away from the interface. Moreover, our results showed that the field emitted from the source was focused on the subwavelength dimensions outside the left-handed medium. 相似文献
7.
Reflection properties of metallic photonic crystals 总被引:1,自引:0,他引:1
B. Temelkuran E. Ozbay M. Sigalas G. Tuttle C.M. Soukoulis K.M. Ho 《Applied Physics A: Materials Science & Processing》1998,66(3):363-365
Received: 10 November 1997/Accepted: 16 November 1997 相似文献
8.
Al0.31Ga0.69N/AlN/GaN/InxGa1?xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different InxGa1?xN back-barriers with In mole fractions of 0.05 ≤ x ≤ 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin InxGa1?xN back-barrier and the surrounding layers. 相似文献
9.
10.
We examined experimentally the effects of incom-ing surface wind on the turbine wake and the wake interfer-ence among upstream and downstream wind turbines sited in atmospheric boundary layer (ABL) winds. The experi-ment was conducted in a large-scale ABL wind tunnel with scaled wind turbine models mounted in different incom-ing surface winds simulating the ABL winds over typical offshore/onshore wind farms. Power outputs and dynamic loadings acting on the turbine models and the wake flow char-acteristics behind the turbine models were quantified. The results revealed that the incoming surface winds significantly affect the turbine wake characteristics and wake interference between the upstream and downstream turbines. The velocity deficits in the turbine wakes recover faster in the incoming surface winds with relatively high turbulence levels. Varia-tions of the power outputs and dynamic wind loadings acting on the downstream turbines sited in the wakes of upstream turbines are correlated well with the turbine wakes charac-teristics. At the same downstream locations, the downstream turbines have higher power outputs and experience greater static and fatigue loadings in the inflow with relatively high turbulence level, suggesting a smaller effect of wake inter-ference for the turbines sited in onshore wind farms. 相似文献