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I. V. Kucherenko V. S. Vinogradov N. N. Mel’nik L. V. Arapkina V. A. Chapnin K. V. Chizh V. A. Yur’ev 《Physics of the Solid State》2008,50(10):1970-1977
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band Λ3 and the conduction band Λ1 (the E 1 and E 1 + Δ1 transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of ≈10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E 1 and E 1 + Δ1 excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm?1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer for which the size dispersion of quantum dots is minimum is determined. 相似文献
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A. S. Prokhorov E. S. Zhukova A. A. Boris I. E. Spektor B. P. Gorshunov V. S.Nozdrin E. A. Motovilova L. S. Kadyrov S. Zapf S. Haindl K. Iida M. Dressel K. V. Chizh M. S. Storozhevykh L. V. Arapkina V. A. Chapnin O. V. Uvarov V. P. Kalinushkin V. A. Yuryev 《Radiophysics and Quantum Electronics》2014,56(8-9):620-627
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Kalinushkin V. P. Klechkovskaya V. V. Klevkov Y. V. Chukichev M. V. Rezvanov R. R. Ilichev N. N. Orekhov A. S. Uvarov O. V. Mironov S. A. Gladilin A. A. Chapnin V. A. 《Crystallography Reports》2019,64(1):113-118
Crystallography Reports - The effect of thermal treatment in zinc vapor on the stoichiometry, defect and impurity structure, and activator cathodoluminescence of ZnSe doped with iron by the thermal... 相似文献
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E. S. Zhukova B. P. Gorshunov V. A. Yuryev L. V. Arapkina K. V. Chizh V. A. Chapnin V. P. Kalinushkin A. S. Prokhorov G. N. Mikhailova 《JETP Letters》2010,92(12):793-798
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures
with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3–1.2 THz
at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient
in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities
of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the
detected increase in the absorption in arrays of quantum dots have been discussed. 相似文献
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