Behavior Study of ZnO Thin Films Grown by PLD for Several Applications

Crystallography Reports - In this work, the effects of glass and Si polycrystalline substrates on structural, morphological, optical and electrical properties of zinc oxide thin films (ZnO)...     

Reactive diffusion in W–Mo–Si thin films

This study reports the phase formation in the ternary thin films system Mo–W–Si. The metallic films were deposited onto Si (100) substrate by sputtering. Two kinds of samples were prepared, either by sequential deposition or by co-deposition. The phase formation was investigated by In situ X-ray diffraction measurements from 300 to 900 °C. The influence of the sample preparation, namely sequential deposition and co-deposition, on the mechanism of phase formation has been evidenced.     

Yttrium silicide films into Si(111) — Fabrication and properties

The formation of a thin layer of hexagonal Y Si_2?x phase on a single-crystal Si(111) substrate by implantation of 195 keV Y ions with a dose of 5×10¹⁶Y ⁺/cm² at room temperature (RT) is investigated. The structural characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the orientation relationship between the Y Si_2?x layer and Si substrate is Y Si_2?x(0 0 0 1)//Si(111) and Y Si_2?x[1 1 -2 0]//Si [110].