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This paper reports that the optical emission spectroscopy (OES) is
used to monitor the plasma during the deposition process of
hydrogenated microcrystalline silicon films in a very high frequency
plasma enhanced chemical vapour deposition system. The OES
intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学 microcrystalline silicon,
VHF-PECVD, optical emission spectroscopy 2005-11-09 2005-11-092005-12-12 This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (Sill^*, H^* and H^*β) are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^* intensity increases with silane concentration, while the intensities of H^*α and H^*β increase first and then decrease. When the substrate temperature increases, the SiH^* intensity decreases and the intensities of H^*α and H^*β are constant. The correlation between the intensity ratio of IH^*α/ISiH^* and the crystalline volume fraction (Xc) of films is confirmed. 相似文献
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沉积压力对磁控溅射纳米硅薄膜结构和性能影响 总被引:1,自引:1,他引:1
采用射频(RF)磁控溅射方法在玻璃衬底上制备了氢化纳米硅薄膜,研究了沉积压力(4~9 Pa)对薄膜结构和性能的影响.利用XRD、SEM、紫外-可见光分光光度计、傅立叶红外吸收光谱仪(FT-IR)及四探针电阻测试仪等对薄膜结构和性能进行了表征.结果表明:随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸降低;薄膜光学带隙在2.04~2.3 eV之间,且随着沉积压力的提高而增加;薄膜具有SiH、SiO、SiH2和SiH3振动吸收峰, 随着沉积压力的增加,SiH、SiH2振动吸收峰向高波数移动,薄膜方块电阻在132~96 Ω/□,且随着沉积压力的升高而降低. 相似文献
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采用RF-PECVD沉积技术制备P型非晶硅薄膜材料,研究硼烷浓度和加热温度对薄膜性能的影响.通过对两者优化,制备出了宽光学带隙、高电导率和致密性较好的P型非晶硅材料.作为窗口层应用到HIT太阳电池中,对其厚度进行优化,在N型单晶硅衬底上制备出了效率为14.28;的HIT太阳电池. 相似文献
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Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films 下载免费PDF全文
Highly conductive boron-doped hydrogenated microcrystalline silicon (\mu
c-Si:H) films are prepared by very high frequency plasma enhanced chemical
vapour deposition (VHF PECVD) at the substrate temperatures $T_{\rm S})$
ranging
from 90$^\circ$C to 270$^\circ$C. The effects of $T_{\rm S}$ on the growth and
properties of the films are investigated. Results indicate that the growth
rate, the electrical (dark conductivity, carrier concentration and Hall
mobility) and structural (crystallinity and grain size) properties are all
strongly dependent on $T_{\rm S}$. As $T_{\rm S}$ increases, it is
observed that 1)
the growth rate initially increases and then arrives at a maximum value of
13.3 nm/min at $T_{\rm S}$=210$^\circ$C, 2) the crystalline volume fraction
($X_{\rm c})$ and the grain size increase initially, then reach their maximum
values at $T_{\rm S}$=140$^\circ$C, and finally decrease, 3) the dark
conductivity ($\sigma _{\rm d})$, carrier concentration and Hall mobility have
a similar dependence on $T_{\rm S}$ and arrive at their maximum values at
$T_{\rm S}$=190$^\circ$C. In addition, it is also observed that at a lower
substrate temperature $T_{\rm S}$, a higher dopant concentration is required in
order to obtain a maximum $\sigma _{\rm d}$. 相似文献
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Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited
by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD)
at a substrate temperature of about 170℃. The electrical, structural, and
optical properties of the films were investigated. The deposited films were then
applied as i-layers for p-i-n single junction solar cells. The current--voltage
(I-V) characteristics of the cells were measured before and after the light
soaking. The results suggest that the films deposited near the transition region
have an optimum properties for application in solar cells. The cell with an i-layer
prepared near the transition region shows the best stable performance. 相似文献