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采用液态的叔丁基砷(tertiarybularsine,TBAs)和叔丁基磷 (tertiarybulphosphine,TBP)为源材料,用有机金属气相外延(metalorganic vapor phase epitaxy,MOVPE)生长了与InP衬底晶格匹配的InGaAs/InP超晶格. 高精度X射线衍射的结果表明,在InGaAs与InP单异质结界面处,存在一个压应变的界面层. 可利用相同的界面模型来模拟InGaAs/InP超晶格的X射线衍射实验结果. 该结果表明,TBAs吹扫InP表面对界面应变产生很大的影响.为此提出了一种新的界面气体转换顺序来控制InGaAs/InP超晶格的界面应变,它先把Ⅲ族源转入反应室,以此来降低TBAs对InP表面的影响,由此得到的超晶格的平均应变减小,光致发光的峰值能量出现蓝移. 相似文献
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基于石墨烯可饱和吸收被动锁模超快全固体激光器的研究 总被引:5,自引:0,他引:5
石墨烯具有饱和恢复时间极短、导热性好、吸收带宽、损耗低、成本低廉且容易制备等优点,被认为是光电子应用中理想的半导体可饱和吸收体材料,近几年受到广泛的关注。介绍了本课题组最近在石墨烯锁模超快全固体激光器研究中取得的一些进展。在用液相剥离方法成功制备出尺寸大于20μm的石墨烯薄片的基础上,将其应用于全固态Nd∶GdVO4激光器,实现了脉宽16 ps、平均功率360 mW的锁模激光输出,单脉冲能量为8.4 nJ;继而在宽带增益介质Yb∶KGW晶体中又实现了脉宽为489 fs的超快激光,平均功率564 mW。 相似文献
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Diphenylene was synthesized directly from benzene under the catalytic effect of GaP nanocrystals, and the effect of GaP nanocrystals content was studied. The experimental results showed that no reactions took place without GaP nanocrystals. The more the GaP nanocrystals added, the more the reaction complete. Furthermore, at high temperatures (450-480℃), when the content of GaP nanocrystals was high enough, almost all benzene polymerized and the yield of diphenylene was rather high. On the contrast, even if there are enough GaP nanocrystals in the reaction mixture, almost no polymerization reaction took place at low temperature (for example, 250-300℃), and the yield of diphenylene was very poor. The analytical results of XRD, IR, elemental analysis and NMR proved that the sample was truly diphenylene. 相似文献
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Lattice-matched InGaAs/lnP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine
(TBAs), tertiarybutylphosphine (TBP) as the group V sources. The results of X-ray diffraction on InGaAs/lnP single herterostructure
show that there is a compressive-strained interfacial layer at the InP-to-InGaAs interface. X-ray diffraction of InGaAs/ InP
superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant
influence on the interfacial strain. A novel gas switching sequence, which switches group III to the run line earlier than
TBAs, is proposed to reduce this interfacial strain. As a result, the average compressive strain of superlattices decreases,
and a blue shift of photoluminescence ( PL) peak energy and narrowing in PL width are obtained. 相似文献