Na+掺杂KLaF4∶Er3+/yb3+纳米晶上转换发光性能的研究

采用水热法,以乙二胺为络合剂合成了Na+离子掺杂的六方相KLaF4∶Er3+/yb3纳米晶.利用X射线衍射谱(XRD)、透射电子显微镜(TEM)、红外光谱(FT-IR)对样品的晶体结构、形貌和表面吸附进行了表征;测量了不同含量Na+掺杂样品在980 nm近红外光激发下的上转换发射光谱和4R/2能级的荧光寿命.结果表明:随着Na+掺杂浓度的增加,KLaF4∶Er3+/yb3+纳米晶上转换红绿光的发光强度均呈现出先增大后减小的趋势,红绿光发射最强强度分别为未掺Na+样品的7.3倍和5.2倍.Na+掺杂使Er3+离子周围晶场的不对称性降低和纳米晶表面吸附基团的减少是发光增强的主要原因.针对Na+掺杂样品的荧光寿命低于未掺样品的原因作了简要讨论.     

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In_2S_3 heterostructure and its solar cell performance

The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by thermal evaporation method at temperatures of 30,100,150,and 200 ℃,respectively.By using x-ray photoelectron spectroscopy(XPS),the valence band offsets(VBO) are determined to be-0.28 ±0.1,-0.28 ±0.1,-0.34 ±0.1,and-0.42 ±0.1 eV for the CZTS/In_2S_3heterostructures deposited at 30,100,150,and 200 ℃,respectively,and the corresponding conduction band offsets(CBO)are found to be 0.3 ±0.1,0.41 ±0.1,0.22±0.1,and 0.01 ±0.1 eV,respectively.The XPS study also reveals that interdiffusion of In and Cu occurs at the interface of the heterostructures,which is especially serious at 200 ℃ leading to large amount of interface defects or the formation of CuInS_2 phase at the interface.The CZTS solar cell with the buffer layer In_2S_3 deposited at 150 ℃ shows the best performance due to the proper CBO value at the heterostructure interface and the improved crystal quality of In_2S_3 film induced by the appropriate deposition temperature.The device prepared at 100 ℃presents the poorest performance owing to too high a value of CBO.It is demonstrated that the deposition temperature is a crucial parameter to control the quality of the solar cells.