排序方式: 共有32条查询结果,搜索用时 0 毫秒
1.
A compact two-stage optical parametric chirped pulse amplifier based on photonic crystal fibre is demonstrated.A 1064-nm soliton pulse is obtained in a home-made photonic crystal fibre (PCF) with femtosecond pulse pumping and then amplified to 2 mJ in an Nd:YAG regenerative amplifier.After the amplified pulses pass through the LBO crystal,the 532-nm double-frequency light with an energy of 0.8 mJ and a duration of over 100 ps at 10-Hz repetition rate is generated as a pump source in the following two-stage optical parametric amplification (OPA).The 850-nm chirped signal light gain from the stretcher is 1.5×10 4 in the first-stage OPA while it is 120 in the second-stage OPA.The total signal gain of optical parametric chirped pulse amplification (OPCPA) can reach 1.8×10 6. 相似文献
2.
3.
利用自蔓延高温合成/原位反应法制备了Ta2AlC陶瓷材料,研究了预热温度和不同铝含量对试样物相组成和微观组织结构的影响.采用X射线衍射分析试样的物相组成;采用SEM观察材料的微观组织结构;借助DSC测试分析,结合反应产物、可能的中间产物及体系吸放热探讨了Ta2AlC的合成机制.研究表明,250℃的预热温度环境下有利于充分反应生成高纯度的Ta2 AlC;适当过量的Al有利于各元素扩散,从而提高合成的TaAlC纯度;利用自蔓延高温合成Ta2AlC时,Al先熔化为液相,继而Ta与C分散到液态Al中发生反应并放出大量的热量,引发Ta与Al反应生成Ta-Al金属化合物,促使生成的Ta2C与Al或TaC与Ta-Al金属化合物发生反应生成Ta2AlC. 相似文献
4.
A novel tiled Ti:sapphire(Ti:S)amplifier was experimentally demonstrated with>1 J amplified chirped pulse output.Two Ti:S crystals having dimensions of 14 mm×14 mm×25 mm were tiled as the gain medium in a four-pass amplifier.Maximum output energy of 1.18 J was obtained with 2.75 J pump energy.The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier.The laser pulse having the maximum peak power of 28 TW was obtained after the compressor.Moreover,the influence of the beam gap on the far field was discussed.This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future. 相似文献
5.
6.
并行冲击/侵彻有限元数值模拟技术 总被引:4,自引:0,他引:4
探讨了冲击/侵彻问题涉及到的非线性材料模型、接触搜索算法、接触力计算公式、破坏模式等理论和算法,介绍了基于集群并行计算机的有限元法并行化基本思路和方法。应用实例表明本文中提出的有限元计算格式和并行化方法能够有效求解冲击/侵彻问题。 相似文献
7.
根据电焓密度函数建立了压电材料静态损伤本构模型,详细讨论了横观各向同性力电损伤的一些特征,最后通过对四点弯曲PZT-PIC151梁跨中导电裂纹附近横观各向同性损伤的数值分析,研究了裂纹深度和外加力、电载荷对损伤分布的影响规律.结果表明:裂纹深度和力载荷对力电损伤都有非常明显相似的影响,随着裂纹深度和力载荷的增大,裂纹尖端的力电损伤明显增大,范围也相应扩大;电载荷对力损伤完全不同于对电损伤的影响,电载荷单调地改变裂纹尖端力损伤的大小,不改变力损伤的区域尺寸,但是对电损伤的影响则比较复杂. 相似文献
8.
9.
10.