排序方式: 共有7条查询结果,搜索用时 15 毫秒
1
1.
提出了一个基于模块计算机的磁共振谱仪的控制接口,它建立了核磁共振成像谱仪与上位计算机之间的通信,实现了控制谱仪、上传和下载、数据处理等功能,具备较高的传输速度,以及较好的实时性. 该接口以硬件模块的方式集成到谱仪上,通过千兆和百兆以太网连接上位机,接收下传至谱仪的序列;用中断机制和直接内存存取(DMA)方式实现与谱仪的数据传输,并将处理采集到的回波数据并上传到上位机. 控制接口的设计采用模块计算机Computer-On-Module(COM)的设计思路,以高性能的处理器为嵌入式平台,在Linux操作系统下开发驱动程序和应用程序. 实验证明,该模块具有数据处理速度快、传输速率高,成本低,体积紧凑,扩展性强等特点,是实现磁共振谱仪高性能的控制接口的理想方案. 相似文献
2.
The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 C for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing. 相似文献
3.
4.
采用电感耦合等离子体增强物理气相沉积法制备了(Cu,Al)掺杂ZnO薄膜,超导量子干涉磁强计测试结果表明,薄膜具有室温的铁磁性。采用激光共聚焦拉曼(Raman)光谱研究了(Cu,Al)掺杂ZnO薄膜的表面特性,以两种处理方式对薄膜进行了Raman光谱测试:共聚焦模式从薄膜表面开始至不同深度处进行测试;对薄膜样品进行预处理加工,采用面扫描模式在薄膜平面对(Cu,Al)掺杂ZnO薄膜的斜面进行测试。分析了Raman光谱A1(LO)峰的中心位置和强度变化,结果表明,界面处晶格应力和缺陷明显增强。这些晶格畸变和点缺陷的存在会对体系的铁磁性有促进作用。 相似文献
5.
6.
Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method.The V concentration is determined to be 3.76×1017 at/cm3 and 6.14×1017 at/cm3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples,respectively.The undoped 6H-SiC shows diamagnetism,while the V-doped 6H-SiC exhibits weak ferromagnetism.The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample.However,the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality.It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals. 相似文献
7.
1