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In the present work, a series of [Fe80Ni20–O/SiO2]n multilayer thin films is fabricated using a reactive magnetron sputtering equipment. The thickness of SiO2 interlayer is fixed at 3 nm, while the thickness values of Fe80Ni20–O magnetic films range from 10 nm to 30 nm. All films present obvious in-plane uniaxial magnetic anisotropy. With increasing the Fe80Ni20–O layer thickness, the saturation magnetization increases slightly and the coercivity becomes larger due to the enlarged grain size, which could weaken the soft magnetic property. The results of high frequency magnetic permeability characterization show that films with thin magnetic layer are more suitable for practical applications. When the thickness of Fe80Ni20–O layer is 10 nm, the multilayer film exhibits the most comprehensive high-frequency magnetic property with a real permeability of 300 in gigahertz range. 相似文献
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透明导电Cd2SnO4薄膜的光学特性研究 总被引:2,自引:1,他引:1
报道了射频反应性溅射Cd-Sn合金靶沉积的Cd_2SnO_4(简称CTO)薄膜在0.2~6.0μm波长范围内的透射和反射谱及其光致发光谱的测量结果,并由此对CTO膜光学性质进行了较详细的理论分析和讨论. 相似文献
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STUDIES ON INFRARED AND PHOTOLUMINESCENCE PROPERTIES OF CdIn2O4 FILMS DEPOSITED BY RF REACTIVE SPUTTERING
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Transparent and conductive CdIn2O4(CIO) thin films were prepared successfully by rf reactive sputtering from a Cd-In alloy target in an Ar+O2 atmosphere. The measurement of transmission and reflection spectra, at wavelengths between 0.2 and 6.0μm, and photoluminescence spectrum of the films are reported. The optical properties of the films are analyzed and discussed in detail. Two reasonable methods for calculating the effective mass of the free carrier in the films are presented. 相似文献
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STUDIES ON INFRARED AND PHOTOLUMINESCENCE PROPERTIES OF CdIn2O4 FILMS DEPOSITED BY RF REACTIVE SPUTTERING
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Transparent and conductive CdIn2O4(CIO) thin films were prepared successfully by rf reactive sputtering from a Cd-In alloy target in an Ar+O2 atmosphere. The measurement of transmission and reflection spectra, at wavelengths between 0.2 and 6.0μm, and photoluminescence spectrum of the films are reported. The optical properties of the films are analyzed and discussed in detail. Two reasonable methods for calculating the effective mass of the free carrier in the films are presented. 相似文献
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在Ar+O2混合气氛中射频反应性溅射Cd-Sn合金靶制备了透明导电Cd2SnO4(简称CTO)薄膜。用X射线衍射测量了CTO膜的结构。实验结果表明,这种薄膜的电学和光学性质依赖于混合气体中的氧浓度、衬底温度以及沉积后的热处理。获得的CTO膜最低电阻率为1.74×10-6Ω·cm,可见光光谱区最高透射率为95%。对于氧浓度为6%、衬底温度为400℃时沉积的CTO膜,经热处理后,其光隙能由热处理前的2.37eV增大为2.6
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