Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the(Ga,Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition.Room-temperature ferromagnetism is observed for the as-grown thin films.The x-ray absorption fine structure characterization reveals that Co 2+ and Ga 3+ ions substitute for Zn 2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin.The ferromagnetic(Ga,Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature.The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.     

固相反应法制备Co掺杂ZnO的磁性和光学性能研究

研究了以固相反应法制备Co掺杂ZnO粉体的磁性和光学性能，测试结果表明对于均匀掺杂的Zn_0.95Co_0.05O粉体，Co²⁺随机取代Zn²⁺的位置进入ZnO晶格.Co²⁺之间的3d自旋电子耦合交换作用使得近邻的Co²⁺自旋反平行，Zn_0.95Co_0.05O粉体在3—300K表现为顺磁性，而非铁磁性. 关键词： ZnO 固相反应 稀磁半导体 顺磁性     

Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing

The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 C for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing.     

Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors

A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn^2＋ for Zn^2＋ without additional acceptor doping. The substitution of N for O （NO^-） is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn^2＋ and Mn^3＋ via NO^-, The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration.     

杂质和缺陷对SiC单晶导热性能的影响

目前关于SiC单晶室温的导热性能,以及导热特性随温度的变化方面的研究报道还存在较大的差异,有关SiC单晶热导率的研究主要是沿c轴<0001>晶向或者垂直于c轴的某一晶向进行的,无法有效地解释热导率的各向异性.本文研究了4H-SiC和6H-SiC单晶<1100>,<1120>,<0001>三个不同晶向上热导率以及其随温度...     

(Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究

采用电感耦合等离子体增强物理气相沉积法制备了(Cu,Al)掺杂ZnO薄膜,超导量子干涉磁强计测试结果表明,薄膜具有室温的铁磁性。采用激光共聚焦拉曼(Raman)光谱研究了(Cu,Al)掺杂ZnO薄膜的表面特性,以两种处理方式对薄膜进行了Raman光谱测试:共聚焦模式从薄膜表面开始至不同深度处进行测试;对薄膜样品进行预处理加工,采用面扫描模式在薄膜平面对(Cu,Al)掺杂ZnO薄膜的斜面进行测试。分析了Raman光谱A₁(LO)峰的中心位置和强度变化,结果表明,界面处晶格应力和缺陷明显增强。这些晶格畸变和点缺陷的存在会对体系的铁磁性有促进作用。     

V掺杂6H-SiC光导开关制备与性能研究

采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关,用强度为150μJ/mm2、波长为355nm的脉冲激光对开关进行触发,在1~14kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究。结果表明:随着开关外加电压的升高,开关的电流峰值呈现不断增大的趋势,当开关外加电压为14kV时,电流峰值达185A,对应的光导开关峰值功率为2.59MW,开关的导通电阻约为22Ω。     

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC

The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.     

Co掺杂ZnO薄膜的局域结构和电荷转移特性研究

采用磁束缚电感耦合等离子体溅射沉积法在不同的氧气分压下制备了Zn_0.95Co_0.05O和Zn_0.94Co_0.05Al_0.01O薄膜.利用X射线吸收精细结构技术对薄膜O-K,Co-K和Co-L边进行了局域结构研究,结果表明：Co²⁺取代了四配位晶体场中的Zn²⁺而未改变ZnO的六方纤锌矿结构,高真空条件下制备的薄膜 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 共振非弹性X射线散射     

磁约束电感耦合等离子体增强溅射沉积Co掺杂ZnO薄膜及其光学特性

采用磁约束电感耦合等离子体增强溅射法(ICP-PVD)在Si(100)和石英玻璃衬底上沉积了Zn_0.95Co_0.05O薄膜。XRD谱显示薄膜具有较强的(002)衍射峰,表明Zn_0.95Co_0.05O薄膜为c轴择优取向生长;透过光谱显示Zn_0.95Co_0.05O薄膜具有良好的透过性,其在可见光和红外波段的平均透过率大于80%,吸收光谱表明Co²⁺取代了Zn²⁺处于四配位晶体场中;喇曼光谱证明Zn_0.95Co_0.05O薄膜具有良好的六方纤锌矿结构;室温PL谱测量发现在可见光的蓝光波段和绿光波段存在较宽的发光带,却没有发现本征的近紫外光发射,这是由于Co掺杂后引入较多的缺陷导致的。