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建立不同粒径球阻抗理论计算方法,提出球阻抗理论计算公式为6ρ/pd(ρ和d分别为球材料电阻率和球粒径),球阻抗理论计算数值与球粒径呈反比。通过实验测量3种不同粒径钢球阻抗数值,实验结果与理论计算相近。为计算不同粒径阻抗编码微球的理论阻抗数值提供数学公式。 相似文献
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The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors 下载免费PDF全文
The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated. 相似文献
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The effects of <sup>60</sup>Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors 下载免费PDF全文
The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated. 相似文献
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在激光分子束外延实验中,用RHEED原位监测了SrTiO3基片初始、退火以及同质外延过程中的表面形态.通过对RHEED图案分析,获取了表面面内的晶格常数振荡与衍射条纹的半高宽振荡现象,前者是由退火重构表面与薄膜之间的界面造成的,后者与二维岛边界的弛豫相关.另外还观察到了等离子体对入射电子束的影响而导致的RHEED强度振荡行为的相位移现象.
关键词:
反射高能电子衍射
SrTiO3
表面晶格常数及衍射强度振荡 相似文献
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