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采用二次阳极氧化工艺,以含有氟化铵和水的乙二醇体系作为电解液,在纯钛表面制备有序的TiO2多孔薄膜.通过改变预处理方式、电压、氧化时间和搅拌速度等实验参数来探究其对TiO2多孔薄膜形貌的影响.结果表明,抛光后Ti基片制得的TiO2多孔薄膜表面更加平整;TiO2纳米孔的孔径和孔间距随着阳极氧化电压升高在一定范围内线性增大;TiO2纳米孔的孔径随着阳极氧化时间延长增大,孔壁随时间延长减薄,通过控制氧化时间可以实现纳米孔薄膜向纳米管阵列的转变;搅拌速度在400 r/min时,能够获得有序的自组织TiO2多孔薄膜. 相似文献
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Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functions on a silicon wafer. In this letter, a 1 x 1 multimode interference (MMI) Mach-Zender interferometer (MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has an extinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response time is less than 30μs. 相似文献
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在超紧缩双曲锥形3dB多模干涉耦合器的基础上,设计了一种新的Silicon-on-insulator (SOI) Mach-Zehnder干涉型电光调制器.与传统的Y分支器相比,双曲锥形3dB耦合器的制作容差大,而长度缩短了近30%,使得整个器件的尺寸大幅减小.调制区采用横向注入的PIN结构,模拟结果表明:当外加偏压为0.86V时,器件的调制深度最大,此时注入电流为13.2mA,对应的器件功耗为11.4mW. 相似文献
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In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs. 相似文献
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