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桑立雯 ;秦志新 ;岑龙斌 ;沈波 ;张国义 ;李书平 ;陈航洋 ;刘达艺 ;康俊勇 ;成彩晶 ;赵鸿燕 ;鲁正雄 ;丁嘉欣 ;赵岚 ;司俊杰 ;孙维国 《中国物理快报》2008,25(1):258-261
We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff- wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1× 10^-6A/cm^2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 10^12cmHz^1/2 W^-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current. 相似文献
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Pt/Hg3In2Te6接触的温度特性研究 总被引:1,自引:1,他引:0
运用直流平面磁控溅射技术在Hg3In2Te6单晶表面制备Pt金属电极,形成Pt/Hg3In2Te6接触,采用I-V测试仪在120~260 K温度范围内对其I-V特性进行测量.根据热电子发射模型,计算得到了Pt/Hg3In2Te6的肖特基势垒高度.结果表明:Pt/Hg3In2Te6形成具有整流特性的肖特基接触,肖特基势垒高度为0.46 eV.在120~260 K温度范围内,理想因子随温度增大逐渐从2.93减小至1.42.将Hg3In2Te6单晶制成红外探测器,发现了响应光谱在波长1.55 μm处峰值达到最大,在室温下峰值探测率D* 达到了1011 cm·Hz1/2·W-1. 相似文献
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