Organic field-effect transistors

The paper reviews the recent year publications concerning organic field-effect transistors (OFETs). A lot of works have been performed to help understanding the structural and electrical properties of materials used to construct OFETs. It has been established that in partially ordered systems, the charge transport mechanism is thermally activated and field-assisted hopping transport and the hopping transport between disorder-induced localized states dominate over intrinsic polaronic hopping transport seen in organic single crystals. Many research attempts have been carried out on the design of air-stable organic semiconductors with a solution process which is capable of producing OFETs with excellent properties and good stability when subjected to multiple testing cycles and under continuous electrical bias. Recent experiments have demonstrated ambipolar channel conduction and light emission in conjugated polymer FETs. These achievements are the basis for construction of OLED based displays driven by active matrix consisting of OFETs.     

Normal modes in the vicinity of the brillouin zone center of tightly bound units in Bi12GeO20 and Bi12SiO20

From Raman data and a group-theoretical analysis, we deduce that in Bi₁₂GeO₂₀ and Bi₁₂SiO₂₀ there are four weakly bound oxygen atoms and a tightly bound unit MO₄, where M = Ge or Si. Some normal modes of the tightly bound units are identified in Raman and in infrared reflection data. The kinds of interatomic binding forces in these crystals are determined. The results are compared with structure data determined by X-ray scattering.     

Reversible photochromic effects in doped single crystals of bismuth germanium (Bi12GeO20) and bismuth silicon oxide (Bi12SiO20)

Absorption of Bi₁₂GeO₂₀ and Bi₁₂SiO₂₀ single crystals doped with Mn and Cr were investigated before and after illumination with visible light. Pronounced photochromic effects were found. The effects are explained in terms of light induced charge transfer Mn⁴⁺→Mn⁵⁺ and Cr³⁺→Cr²⁺.     

Phase transitions in PbZr0.72Sn0.28O3 single crystals studied by Raman spectroscopy

ABSTRACT

Raman light scattering measurements in the temperature range from 80 to 830 K were performed on a PbZr_0.72Sn_0.28O₃ single crystal. The frequencies of the Raman lines were analyzed and discussed in terms of the sequence of structural phase transitions. It was found that Raman spectrum displays important changes near 440, 480 and 493 K. The incorporation of more than 25 mol% of Sn⁴⁺ ions into the structure of PbZrO₃ enhances polar fluctuations above T_C as compared to the less Sn-doped crystals. These fluctuations lead to appearance of a ferroelastic intermediate phase below T_C. It is demonstrated that the structural phase transformation in PbZr_0.72Sn_0.28O₃ can be considered as the result of softening of a number of modes.     

Dielectric investigation of the diamagnetic anisotropy and elasticity of 4-trans-4′-n-hexyl-cyclohexyl-isothiocyanatobenzene (6CHBT)

Abstract

We have measured the dielectric constants of 6CHBT. The results from studies of various alignments and thicknesses measured under different electric and magnetic fields are presented. We discuss how the dielectric properties depend on boundary conditions, sample thickness and the magnitudes of electric and magnetic fields. Experimental results and discussion in the terms of continuum theory make it possible to compute the diamagnetic anisotropy (Δχ), as well as the splay and bend elastic constants (K ₁₁, K ₃₃) of 6CHBT.     

On p-adic valuations of certain m colored p-ary partition functions

The Ramanujan Journal - Let $$k\in \mathbb {N}_{\ge 2}$$ and for given $$m\in \mathbb {Z}{\setminus }\{0\}$$ consider the sequence $$(S_{k,m}(n))_{n\in \mathbb {N}}$$ defined by the power series...     

The low temperature magnetic properties of potassium holmium double tungstate

The magnetic investigations of potassium holmium double tungstate KHo(WO₄)₂ have been performed. The results of measurements of magnetic susceptibility and magnetization as a function of both temperature (T = 0.5–100 K) and magnetic field (up to 2 T) are presented.     

The Czochralski growth of doped bismuth-germanium oxide (BGO) and bismuth-silicon oxide (BSO) single crystals

Doped single crystals of BGO and BSO with Cr, Mn, Cu, Ni have been grown. The conditions for the growth of doped single crystals by the Czochralski method have been determined, analyses of distributions of dopants in the crystals have been made. For the Mn, Cr, Cu, doped crystals changes of coloration after illumination with visible light have been observed.     

Crystal structure and phonon properties of noncentrosymmetric LiNaB4O7

A new borate, LiNaB₄O₇, has been synthesized and characterized by single-crystal X-ray structure determination. The material crystallizes in the orthorhombic system, noncentrosymmetric space group Fdd2, with unit cell dimensions a=13.325(2), b=14.099(2), c=10.243(2) Å, Z=16, and V=1924.3(7) Å³. Like Li₂B₄O₇, the structure is built of two symmetrically independent, interpenetrating polyanionic frameworks built from condensation of the B₄O₉ fundamental building block, which is comprised of two distorted BO₄ tetrahedra and two BO₃ triangles. The interpenetrating frameworks produce distinct tunnels that are selectively occupied by the Li and Na atoms. Large single crystals exhibiting an optical absorption edge with λ<180 nm have been grown via the top-seeded-solution-growth method. The SHG signal (0.15× potassium dihydrogen phosphate (KDP)) is consistent with the calculated components of the SHG tensor and the approximate centrosymmetric disposition of the independent and interpenetrating frameworks. A complete analysis of polarized IR and Raman spectra confirms a close relationship between the title compound and Li₂B₄O₇.     

The Goldstone mode in mixtures containing ferroelectric liquid crystals

Abstract

Measurements of complex electric permittivity of room temperature ferroelectric liquid crystal mixtures have been made on aligned samples with the electric measuring field being parallel to the layer planes. The spontaneous polarization, the tilt angles and pitch have been measured in these mixtures. By theoretical fitting of the experimental points of electric permittivity for the Cole–Cole modification of the Debye equation dielectric parameters, the dielectric strength, relaxation frequency, and distribution parameter for the Goldstone mode have been computed. The dielectrically observed Goldstone mode in our mixtures is shown to have both DC bias field and AC field dependences.