A simple method for quantitative analysis of elements by WD‐XRF using variable dilution factors in fusion bead technique for geologic specimens

A common approach in the quantitative analysis of geological samples by X‐ray fluorescence is to establish calibration lines for elements of interest by using several reference materials (RMs) and/or the combination of RMs and pure chemicals. Herein, we introduce an alternative to use only two RMs, to establish a calibration application. Variation of the dilution factor is employed to generate a dynamic range of concentrations for each RM and to evenly furnish the calibration lines to analyze certain matrices. A wide range of dilution factors were employed from 2–54 times dilution (with respect to the flux to sample ratios). Calibration lines for the major elements including: Si, Al, Ca, Fe, Mg, Na, Mn, and Ti show an extremely high level of linearity with all elements. R² values greater than 0.9990 were obtained for each analyzed element. The calibration application was validated by checking against a variety of geological RMs including petroleum and carbonate rich shale (SGR‐1), Muscovite rich marine shale (SBC‐1), metamorphic rock (SDC‐1), carbonatite (COQ‐1), and types of igneous rocks (GSP‐2, BCR‐2, AGV‐2, QLO‐1, and W‐2). Mixtures of Alumina and Silica (ARG‐1 and ARG‐2) and pure SiO₂ beads were also analyzed to further check the application. Rigorous statistical analysis on the RMs confirms the reliability of the calibration application for the employed matrices. Copyright © 2016 John Wiley & Sons, Ltd.     

Growth of single crystals of semiconductor solid solutions by double feeding of the melt method

Crystallography Reports - The problem of component distribution in solid solution crystals grown from a melt fed by rods made of the components of the system, with allowance for the dependence of...     

Growth dynamics of Ge1?xSix single crystals obtained by directional constitutional supercooling of the melt

The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of Ge_1−x Si _x crystals (0 ≤ x ≤ 0.3) are calculated. It is shown that the Ge_1−x Si _x crystallization rate significantly changes during growth. The results make it possible to determine the optimal conditions and technological parameters for growing Ge_1−x Si _x single crystals (0 ≤ x ≤ 0.3) with a specified concentration gradient along the crystallization axis.