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Preparation and characterization of In–Se compound thin films prepared by sol–gel methods on glass substrate have been studied. X-ray diffraction analyses and optical transmission spectrum of In–Se compound thin film samples show that the fabricated sol–gel In–Se thin films features formed mainly as an In2Se3 crystal structure. From transmission spectra of In–Se thin films band gap energy were estimated approximately as ∼1.24 eV.  相似文献   
2.
The influences of γ-radiation with photon energy hν ~ 1.23 MeV on photoconductivity of layered InSe crystals have been studied. The photosensitivity is increased because of small doses of γ-radiation. It has been observed that γ-radiation makes the impurity peaks in the photoconductivity spectra disappear. This process is attributed to the phenomenon of irradiation annealing characterized by formation of the complexes including fine impurity centers and specific γ-radiation defects.  相似文献   
3.
In this study we describe the preparation of Ga2Se3 semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga2Se3 crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga2Se3 thin films was estimated to be about E g ~ 2.56 eV. The thickness of the one-coat Ga2Se3 thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm.  相似文献   
4.
Russian Journal of Applied Chemistry - The conversion of straight-run naphtha on composite catalytic systems containing HZSM-5 zeolite modified with 0.4 wt % Co or Ni and 15% SZ (10% SO 4 2-...  相似文献   
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