Addition-elimination of nitroalkanes to 3-phenacylideneoxindoles—direct method for the synthesis of 3-alkenylphenacylidene-oxindoles

The first addition-elimination of nitroalkanes to 3-phenacylideneoxindoles was developed, affording the corresponding 3-alkenylphenacylidene-oxindoles with high yields.The addition-elimination mechanism of 3-phenacylideneoxindoles with nitroalkanes and removable NO₂ group in concert guarantees the high regioselectivity.     

Subtle Alignment of Organic Semiconductors at the Donor/Acceptor Heterojunction Facilitates the Photoelectric Conversion Process

Chinese Journal of Polymer Science - The aligned molecular packing structure is vital to the anisotropic charge transport in conjugated polymer and small molecule thin films. However, how this...     

Synthesis and Electronic Structure of Triazasubporphyrin with Peripherally Low Symmetric Push-pull Substitutions

Peripherally low symmetric substitution with electron-donating(EDG)and electron-withdrawing(EWG)substituents caused the rational modulation of geometric structure and even the electronic structure of triazasubporphyrin,the smallest 14πconjugated aza-porphyrinoids.Both structural characterization and spectroscopic investigation were discussed to provide an in-depth understanding of the relationship between peripheral push-pull substituents and SubPz core.     

木糖-软模板水热法制备硼掺杂分级多孔炭球及其电化学性能

以D-木糖为炭源,月桂酸钠为模板剂,硼酸为掺杂剂,通过水热炭化方法制得硼掺杂分级多孔炭球（BPC_S）。通过扫描电子显微镜（SEM）、透射电子显微镜（TEM）、N₂吸附-脱附测试、X射线光电子能谱（XPS）、顺磁共振波谱（EPR）、傅里叶红外光谱（FT-IR）、拉曼光谱（Raman）、X射线粉末衍射（XRD）、热重（TG）分析对样品进行表征。结果表明：月桂酸钠作为介孔造孔剂的同时,通过与D-木糖间的氢键作用使有机-有机自组装过程自发进行并形成窄尺寸分布（2~5 μm）规整炭球;硼酸在水热中催化炭源脱水降解,并以BC₃、BCO₂和BC₂O的形式掺杂在炭球上,掺硼后炭球与水表面接触角降低,润湿性提高。经CO₂活化、月桂酸钠高温分解以及胶质炭球的堆积分别产生微孔（0.5~1.2 nm）、介孔（3.14~35.00 nm）和大孔（60~146 nm）并形成分级结构。当硼酸加入量为0.927 5 g时多孔炭球（BPC_S-1）的电化学性能最佳,在6 mol·L^-1 KOH三电极体系中电流密度为0.5 A·g^-1时,比电容达287.12 F·g^-1;两电极体系中电流密度为0.5 A·g^-1时比电容达151.34 F·g^-1,能量密度达5.3 Wh·kg^-1;电流密度为5 A·g^-1时进行1 000次充放电循环,电容保持率仍达96.43%。     

MgO和Fe2O3的添加对GDCSi体系微观结构及电化学性能的影响

采用溶胶凝胶法制备Gd_0.2Ce_0.8O_3-δ +0.05%（质量分数）SiO₂（GDCSi）电解质。在GDCSi体系中加入Fe₂O₃及MgO可达到降低烧结温度的同时提高晶界电导率，并减小杂质SiO₂对氧离子在晶界处传输的阻碍的目的。将MgO和Fe₂O₃单掺杂或双掺杂在GDCSi体系中并对GDCSi基电解质的微观形貌及电性能进行研究。结果表明，所有样品主要由立方萤石结构相组成；物质的量分数4%MgO单掺杂的GDCSi-M、物质的量分数4%Fe₂O₃单掺杂的GDCSi-F以及物质的量分数2%MgO-物质的量分数2%Fe₂O₃共掺杂的GDCSi-MF均可促进GDCSi体系晶粒增长，降低晶粒间孔隙率，提高电解质的相对密度，降低晶粒电阻R_gi、晶界电阻R_gb及总电阻R_t；GDCSi-MF具有最高晶界电导率和总电导率，在400 ℃时GDCSi-MF的晶界电导率σ_gb和总电导率σ_t分别是GDCSi的10.41和1.82倍。     

A Calixarene Assembly Strategy of Combined Anti-Neuroinflammation and Drug Delivery Functions for Traumatic Brain Injury Therapy

Excessive inflammatory reaction aggravates brain injury and hinders the recovery of neural function in nervous system diseases. Microglia, as the major players of neuroinflammation, control the progress of the disease. There is an urgent need for effective non-invasive therapy to treat neuroinflammation mediated by microglia. However, the lack of specificity of anti-inflammatory agents and insufficient drug dose penetrating into the brain lesion area are the main problems. Here, we evaluated a series of calixarenes and found that among them the self-assembling architecture of amphiphilic sulfonatocalix[8]arene (SC8A12C) had the most potent ability to suppress neuroinflammation in vitro and in vivo. Moreover, SC8A12C assemblies were internalized into microglia through macropinocytosis. In addition, after applying the SC8A12C assemblies to the exposed brain tissue, we observed that SC8A12C assemblies penetrated into the brain parenchyma and eliminated the inflammatory factor storm, thereby restoring neurobiological functions in a mouse model of traumatic brain injury.     

饮用水中几种主要阴离子的高效毛细管电泳-电导分离检测

毛细管电泳(CE)由于具有分离效率高、分析速度快、样品用量少、环境友好、应用范围广以及在很大程度上所显示的高选择性等优点,可用于无机小离子和以有机酸或生物碱为代表的有机小分子的分离分析,并已愈来愈引起分析工作者的关注,成为现有的一些分析手段,如离子色谱(IC)和光谱分析等的重要竞争对象[1].     

Structures and correlation functions of multicomponent and polydisperse hard-sphere mixtures from a density functional theory

The structures of nonuniform binary hard-sphere mixtures and the correlation functions of uniform ternary hard-sphere mixtures were studied using a modified fundamental-measure theory based on the weight functions of Rosenfeld [Rosenfeld, Phys. Rev. Lett. 63, 980 (1989)] and Boublik-Mansoori-Carnahan-Starling-Leland equation of state [Boublik, J. Chem. Phys. 53, 471 (1970); Mansoori et al., J. Chem. Phys. 54, 1523 (1971)]. The theoretical predictions agreed very well with the molecular simulations for the overall density profiles, the local compositions, and the radial distribution functions of uniform as well as inhomogeneous hard-sphere mixtures. The density functional theory was further extended to represent the structure of a polydisperse hard-sphere fluid near a hard wall. Excellent agreement was also achieved between theory and Monte Carlo simulations. The density functional theory predicted oscillatory size segregations near a hard wall for a polydisperse hard-sphere fluid of a uniform size distribution.     

Tetraolefin stereospecific photodimerization and photopolymerization in coordination polymers

Science China Chemistry - In the context of the highly desirable design and preparation of smart materials with adjustable properties based on photoreactive compounds, we report two unique...     

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.