Use of allyl, 2-tetrahydrofuryl, and 2-tetrahydropyranyl ethers as useful C3-, C4-, and C5-carbon sources: palladium-catalyzed allylation of aldehydes

Palladium-diethylzinc or palladium-triethylborane catalytically promotes self-allylation of 2-(allyloxy)tetrahydrofurans, 2-(allyloxy)tetrahydropyrans, and their hydroxy derivatives on the rings (ribose, glucose, mannose, deoxyribose, deoxyglucose). All the reactions proceed at room temperature and provide polyhydroxyl products, sharing a structural motif of a homoallyl alcohol, in good to excellent yields with high levels of stereoselectivity. Useful C3-unit elongation, which makes the best use of an allyl ether as a protecting group and a nucleophilic allylation agent, is demonstrated. Mechanisms for the umpolung reaction (of an allyl ether into an allylic anion) and stereoselectivity associated with allylation of aldehydes are discussed.     

Triethylborane as an efficient promoter for palladium-catalyzed allylation of active methylene compounds with allyl alcohols

Without prior activation of allyl alcohols, allylation of a variety of active methylene compounds with allyl alcohols proceeds smoothly at rt-50°C in the presence of catalytic amounts of Pd(OAc)₂ (1-10 mol%), Et₃B (30-240 mol%), a phosphine ligand (1-20 mol%), and a base (0 to 50-60 mol%).     

Self-organized glycoclusters along DNA: effect of the spatial arrangement of galactoside residues on cooperative lectin recognition

We describe herein the relationship between the spatial arrangement of self-organized galactose clusters and lectin recognition. beta-Galactose-modified deoxyuridine phosphoramidite was synthesized and applied to solid-phase synthesis to provide 18-, 20-, and 22-mers of site-specifically galactosylated oligodeoxynucleotides (Gal-ODNs). These Gal-ODNs were self-organized through hybridization with the corresponding 18-, 20-, and 22-mers of half-sliding complementary ODNs (hsc-ODNs) to give periodic galactoside clusters. The self-organization of ODNs was confirmed by size exclusion chromatography and gel electrophoresis. The binding of the Gal-clusters to the FITC-labeled RCA(120) lectin was analyzed by monitoring the change in fluorescence intensity. The assembly of 20-mer Gal-ODN with the 20-mer hsc-ODN was strongly and cooperatively recognized by the lectin. The 18-mer assembly was bound more weakly and less cooperatively, and the 22-mer assembly was minimally bound to the lectin. RCA(120) lectin recognized not only the density of galactoside residues, but also the spatial arrangement. The size of the Gal cluster was estimated from the association constant of Gal-ODN with hsc-ODN. The relationship between lectin-recognition and Gal-cluster size is also discussed.     

Palladium-catalyzed allylation of imines with allyl alcohols

A catalytic system, Pd(OAc)2 (10 mol %)-P(n-Bu)3 (20 mol %)-Et3B (360 mol %), promotes allylic alcohols to undergo the allylation of anisidine-imines of aromatic and aliphatic aldehydes and furnishes homoallylamines in good to moderate yields. The reaction shows unique stereoselectivity, giving anti-isomers selectively. [reaction: see text]     

Role of Re Species and Acid Cocatalyst on Ir‐ReOx/SiO2 in the C–O Hydrogenolysis of Biomass‐Derived Substrates

The catalytic performance of ReO_x‐modified Ir metal catalyst in the hydrogenolysis of C–O bonds is strongly dependent on the choice of solvent. The acidic property of the Re species becomes obvious in the alkane solvent, and the hydrogenolysis reaction proceeds mainly by acid‐catalyzed dehydration and the subsequent metal‐catalyzed hydrogenation. The acidic property of the Re species is weakened in water; however, the hydrogenolysis reaction proceeds in water via a direct mechanism involving S_N2‐like attack of a hydride species at the interface between Ir and ReO_x on the adsorbed Re alkoxide species. This mechanism enabled the selective dissociation of the C–O bond neighboring the CH₂OH group.     

Sound attenuation study on the bose-Einstein condensation of magnons in TlCuCl3

We investigate experimentally and theoretically sound attenuation in the quantum spin system TlCuCl3 in magnetic fields at low temperatures. Near the point of Bose-Einstein condensation of magnons a sharp peak in the sound attenuation is observed. The peak demonstrates a hysteresis as a function of the magnetic field pointing to a first-order contribution to the transition. The sound damping has a Drude-like form arising as a result of hard-core magnon-magnon collisions. The strength of the coupling between lattice and magnons is estimated from the experimental data. The puzzling relationship between the transition temperature and the concentration of magnons is explained by their "relativistic" dispersion.     

Bose-Einstein condensation of dilute magnons in TlCuCl3

The recent observation [A. Oosawa et al., J. Phys. Condens. Matter 11, 265 (1999)] of the field-induced Neel ordering in the spin-gap magnetic compound TlCuCl3 is interpreted as a Bose-Einstein condensation of magnons. A Hartree-Fock-type calculation based on this picture is shown to describe the temperature dependence of the magnetization well.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².