Nano-LC: An updated review

Low-flow chromatography has a rich history of innovation but has yet to reach widespread implementation in bioanalytical applications. Improvements in pump technology, microfluidic connections, and nano-electrospray sources for MS have laid the groundwork for broader application, and innovation in this space has accelerated in recent years. This article reviews the instrumentation used for nano-flow LC, the types of columns employed, and strategies for multidimensionality of separations, which are key to the future state of the technique to the high-throughput needs of modern bioanalysis. An update of the current applications where nano-LC is widely used, such as proteomics and metabolomics, is discussed. But the trend toward biopharmaceutical development of increasingly complex, targeted, and potent therapeutics for the safe treatment of disease drives the need for ultimate selectivity and sensitivity of our analytical platforms for targeted quantitation in a regulated space. The selectivity needs are best addressed by mass spectrometric detection, especially at high resolutions, and exquisite sensitivity is provided by nano-electrospray ionization as the technology continues to evolve into an accessible, robust, and easy-to-use platform.     

Fully asynchronous stochastic coordinate descent: a tight lower bound on the parallelism achieving linear speedup

Mathematical Programming - We seek tight bounds on the viable parallelism in asynchronous implementations of coordinate descent that achieves linear speedup. We focus on asynchronous coordinate...     

新型含吡啶基团二羧酸配体的合成及单晶培养

以1，4-二溴-2，5-二甲基苯和4-吡啶硼酸为原料，经两步合成了一种新颖的含吡啶基团的二羧酸配体。通过核磁共振氢谱及傅里叶变换红外光谱对配体结构进行表征，通过热重分析对配体的热稳定性进行了测试；通过溶剂热法对配体的单晶进行培养，并考察反应温度、时间、pH和溶剂等条件对单晶培养的影响。结果表明：在反应温度为80 ℃，反应时间为12 h、溶剂为蒸馏水、溶液pH=5的条件下可获得高质量单晶。该配体为单斜晶系，属于C2/c空间群，结构中含有4个氧原子和2个氮原子，可为金属离子的配位提供足够的位点，有望应用于配合物的设计或催化、吸附和医药载体等行业。     

BRST cohomology and highest weight vectors. I

We initiate a program to study certain recent problems in non-compact coset CFT by the BRST approach. We derive a reduction formula for the BRST cohomology by making use of a twisting by highest weight modules. As illustrations, we apply the formula to the bosonic string model and a rank one non-compact coset model [DPL]. Our formula provides a completely new approach to non-compact coset construction.Partially supported by NSF Grant DMS-8703581     

Effect of induced shielding current transmission in longitudinal direction on levitation force of melt grown single-domain YBa_2Cu_3O_(7-x) cylindrical superconductor

YBa2Cu3O7-x (YBCO) bulk is one of the most important high temperature superconducting materials for magnetic levitation applications, because it has a high magnetic irreversibility field Hirr at liquid nitrogen temperature, and can grow into large grains. The levitation force of YBCO bulk is proportional to the critical current density (Jc) and grain radius (r)[1], so higher Jc and r are appreciated for YBCO bulks to achieve higher levitation force. Now single-domain YBCO bulks up to s…     

相对论重离子碰撞实验中混合事件方法的研究

把RQMD(Relativistic Quantum Molecular Dynamics)产生器产生的数据输入作为原始事例取样,讨论了在比较复杂的背景情况下,一种新的混合事件方法,用以证实在相对论重离子碰撞实验中高能量激发共振态的存在.并以共振态重子Δ⁺⁺为例演示了这一方法的应用.     

用模拟万用表测电容

介绍了用模拟万用表和秒表测量电容的简单方法，对测量结果的误差原因进行了分析，给出了提高测量精度的几点措施。     

CALCULUS OF VARIATIONS WITH DIRICHLET BOUNDARY VALUE PROBLEM FOR PERTURBED SECOND-ORDER DIFFERENTIAL EQUATIONS ON A HALF-LINE

Dirichlet boundary value problems for perturbed second-order differential equations on a half line are investigated in this paper. The methods mainly depend on the calculus of variations to the classical functionals. Sufficient conditions are obtained for the existence of the solutions.     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.