Kinetics and mechanism of photolysis of 2,6-di-tert-butyl-1,4-benzoquinone diazide in benzene and deuterobenzene

Conclusions It has been established by kinetic and spectral methods that the cyclohexadiene carbene generated in the photolysis of 2,6-di-tert-butyl-1,4-benzoquinone diazide in benzene predominantly in the singlet state reacts with benzene to form a norcaradiene derivative, which isomerizes thermally to 4-phenylcyclohexadiene-2,5-one. The latter is converted thermally to 2,6-di-tert-butyl-4-phenylphenol.Translated from Izvestiya Akadeinii Nauk SSSR, Seriya Khimicheskaya, No. 12, pp. 2680–2685, December, 1986.     

Visual spatial memory is enhanced in female rats (but inhibited in males) by dietary soy phytoestrogens

Background  

In learning and memory tasks, requiring visual spatial memory (VSM), males exhibit superior performance to females (a difference attributed to the hormonal influence of estrogen). This study examined the influence of phytoestrogens (estrogen-like plant compounds) on VSM, utilizing radial arm-maze methods to examine varying aspects of memory. Additionally, brain phytoestrogen, calbindin (CALB), and cyclooxygenase-2 (COX-2) levels were determined.     

Some features of the electrical forming of MDM systems based on silicon oxynitride films

Results are given in this paper of a study of the electrical forming process in thin-film MDM systems based on films of silicon oxynitride of varying compositions. It was observed that the forming voltage and forming rate of a thin-film Al-Si_xN_yO_z-Al system depends essentially on the composition of the dielectric film while the characteristics of the formed structures depend weakly on the oxygen/nitrogen ratio in the film. The results obtained are in good agreement with Shnurov's model of forming.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 71–74, May, 1976.     

”Reverse” annealing mechanism in ion-doped silicon layers subjected to electron beam heating

The annealing of silicon layers doped by high doses (10¹⁵-10¹⁶ cm^–2) of P⁺, As⁺, or Sb⁺ ions by means of an electron beam applied for 10–20 sec is studied. It is established that when a certain specimen temperature is exceeded, reverse annealing of the ion-implanted layers commences- a decrease in the degree of activation of the impurity introduced. The mechanism of reverse annealing in Si+> and Si+> layers is related to exit of P⁺ and As⁺ ions into interstices with their subsequent sublimation. In the case of heating of an Si+> layer reverse annealing is caused by exit of Sb⁺ ions into interstices and formation of impurity-defect complexes.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 97–102, August, 1989.     

The application of homotopy analysis method to solve nonlinear differential equation governing Jeffery–Hamel flow

In this paper Jeffery–Hamel flow has been studied and its nonlinear ordinary differential equation has been solved through homotopy analysis method (HAM). The obtained solution in comparison with the numerical ones represents a remarkable accuracy. The results also indicate that HAM can provide us with a convenient way to control and adjust the convergence region.