排序方式: 共有62条查询结果,搜索用时 15 毫秒
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采用水热法合成四硫化三钴(Co3S4)催化材料,并利用球磨和喷涂技术将其制备成对电极,结合新型无碘电解液Co2+/Co3+用于染料敏化太阳电池(dye-sensitized solar cells,简称DSCs)来研究其光电性能。测试结果显示,基于Co3S4对电极,DSCs的能量转化效率(power conversion efficiency,简称PCE)只有6.06%,远远低于Pt对电极(8.05%)。为了提高Co3S4的催化能力,采用静电纺丝技术制备碳纳米纤维(electrospun carbon nanofibers,简称ECs),结合水热法制备出不同负载量的碳纳米纤维负载四硫化三钴(Co3S4/ECs)复合催化材料用于对电极,结果表明,Co3S4/ECs的PCE最高可达(8.22±0.08)%,优于Pt对电极。 相似文献
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采用第一性原理计算方法研究了二维β相GeSe的电子结构,通过对二维单层β-GeSe剪切得到一维β-GeSe扶手椅型纳米带.研究不同带宽(N=1-5)β-GeSe扶手椅型纳米带的几何结构和电子性质,发现不同带宽纳米带能带带隙不同,带隙总体上随着带宽减小,而纳米带直接带隙半导体性质不受带宽影响.通过使用H、F原子对GeSe扶手椅型纳米带边缘修饰,H原子修饰纳米带导致能带类型从直接带隙向间接带隙的转变.在费米能级附近处F原子各轨道对价带和导带贡献比H原子各轨道贡献多,在边缘修饰中纳米带对F原子更加敏感.未修饰和使用H原子修饰纳米带在可见光范围内没有吸收峰,用F原子修饰纳米带在可见光范围内出现吸收峰.研究表明可以通过边缘修饰调控纳米带光学特性. 相似文献
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Rui Tao Xue-Jiao Yin Ke-Hu Wang Yu-Zhuo Niu Ya-Lin Wang Dan-Feng Huang Ying-Peng Su Jin-Xian Wang Yu-Lai Hu Ying Fu Zheng-Yin Du 《中国化学快报》2015,26(8):1046-1049
Exceedingly fast preparation of trifluoromethyl tertiary alcohols has been accomplished from methyl ketones and trifluoromethyl ketones under solvent free conditions by cross Aldol reaction. The reaction was achieved in the presence of common inorganic base by grinding method at ambient temperature to give β-trifluoromethyl-β-hydroxyl ketones in high yields (up to 95%). 相似文献
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Xiao-Ying Li Yong Ren Xue-Jiao Chen Da-Yong Qiao Wei-Zheng Yuan 《Journal of Radioanalytical and Nuclear Chemistry》2011,287(1):173-176
The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology
are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm2 to collect the charge from a 4 mCi/cm2
63Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed.
A prototype of this battery was fabricated and tested under the illumination of the 63Ni source with an activity of 0.12 mCi. An open circuit voltage (V
OC) of 0.27 V and a short circuit current density (J
SC) of 25.57 nA/cm2 are measured. The maximum output power density (P
max) of 4.08 nW/cm2 and power conversion efficiency (η) of 1.01% is obtained. The performance of this battery is expected to be significantly
improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable
performance with previously constructed p–n or p–i–n junction energy conversion structures, the Schottky barrier diode proves
to be a feasible approach to achieve practical betavoltaics. 相似文献
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以金纳米花为种子, 抗坏血酸和硝酸银混合物作为生长溶液制备了Au-Ag纳米花. 当Ag/Au的摩尔比从0增加到0.3时, 银可以在Au种子表面沉积, 得到的Au-Ag纳米花光谱在592~518 nm之间连续可调, 同时纳米花的枝长逐渐减小; 而当Ag/Au摩尔比大于0.3时, 还原的银出现自成核现象. 与Au纳米花相比, Au-Ag纳米花体现出了更好的Raman增强活性. 相似文献