Deep trench etching in macroporous silicon

We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. It also enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics. The limits of this new process are simulated using electrostatic models and are verified experimentally. PACS 82.45.Yz; 81.16.-c     

Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting

Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH₃ plasma as the phosphorus source and an extra H₂ plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures.     

Channel activity of a viral transmembrane peptide in micro-BLMs: Vpu(1-32) from HIV-1

We report for the first time on pore-suspending lipid bilayers, which we call micro-black lipid membranes (micro-BLMs), based on a highly ordered macroporous silicon array. Micro-BLMs were established by first functionalizing the backside porous silicon surface with gold and then chemisorbing 1,2-dipalmitoyl-sn-glycero-3-phosphothioethanol followed by spreading 1,2-diphytanoyl-sn-glycero-3-phosphocholine dissolved in n-decane. Impedance spectroscopy revealed the formation of single lipid bilayers confirmed by a mean specific capacitance of 0.6 +/- 0.2 microF/cm2. Membrane resistances were in the G omega-regime and beyond. The potential of the system for single channel recordings was demonstrated by inserting the transmembrane domain of the HIV-1 accessory peptide Vpu(1-32), which forms helix bundles with characteristic opening states. We elucidated different amilorides as potential drugs to inhibit channel activity of Vpu.     

Microstructural characterization of Li insertion in individual silicon nanowires

The lithiation and delithiation process of silicon nanowire arrays (SiNWs) on silicon substrates has been studied with high-resolution electron microscopy. The composition of lithiated SiNWs was revealed, consisting of the unreacted crystalline silicon core and the reacted amorphous Li–Si shell. In particular, the Li–Si shell was comprised of a mixture of amorphous silicon oxide and crystalline silicon, leading to hindrance during Li–Si alloying/dealloying upon cycling.     

Reduced pore diameter fluctuations of macroporous silicon fabricated from neutron‐transmutation‐doped material

The precision of photo‐electrochemical etching of perfectly‐ordered macropores in single‐crystalline silicon is limited by pore diameter fluctuations due to doping variations of the starting wafer (striations). The doping variation originates from the rotation during crystal growth in the float‐zone or Czochralski process, respectively. Experimentally, variations of the pore diameter up to 7% can occur. These so‐called striations limit performance of possible applications of macroporous silicon. As doping inhomogeneities are the reason for the striations, uniformly doped silicon wafers by neutron transmutation doping were used for the first time. Photoelectrochemical etching of neutron transmutated silicon has been carried out and the pore diameter fluctuation has been reduced by about 40% compared to standard doped float‐zone wafers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)