Gain depletion due to amplified spontaneous emission in multi-pass laser amplifiers

Calculations of the effects of amplified spontaneous emission (ASE) in laser amplifiers designed to amplify sub-picosecond pulses are presented. A one-dimensional code is used with some simple approximations to account for aspect ratio variation in cases of cylindrical symmetry. Gain depletion due to ASE is compared for various multi-pass geometries. Optimisation for short pulse amplification of a telescopic, beam-expanding, 4-pass amplifier is considered.On leave from Electrotechnical Laboratory, Tsukuba, Ibaraki, Japan     

Decay and regularity for dispersive equations with constant coefficients

This article discusses some smoothing estimates of the initial value problem for dispersive equations with constant coefficients. In particular, it is shown that a certain condition for the principal part of the symbol (see the assumption (1.3) below, which is equivalent to the one “of principal type” in the paper by Ben-Artzi and Devinatz [2]) is necessary and sufficient for the maximal smoothing in space-time. Dedicated to Professor Norio Shimakura The author was supported in part by Grant-in-Aid for Scientific Research, Ministry of Education, Culture, Sports, Science and Technology, Japan (No. 13640187).     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.