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Abstract A review is presented of a very general aspect of the response of all metals subjected to displacive irradiation. This aspect is referred to as «persistence» and describes the tendency of both radiation-induced microstructural evolution and the associated changes in material properties or dimensional stability to evolve to saturation states that resist further change upon continued irradiation. It is shown that new persistent states can develop on a longer time frame associated with the late-term loss of existing microstructural components or the gain of new components, especially when transmutation and/or segregation occurs. The persistent states are often dependent on the irradiation conditions, and if these are changed, the material usually adjusts to form the persistent state characteristic of the new conditions, with the memory of the former state often lost, and sometimes leaving no visible record of the former state in the new microstructure. Depending on the microstructural components involved, the transition toward the new persistent state can occur quickly or very slowly. 相似文献
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In this study,the three dimensional nanoscale organization in the photoactive layers of poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM) is revealed by transmission electron tomography.After annealing treatment,either at elevated temperature or during slow solvent evaporation,nanoscale interpenetrating networks are formed with high crystalline order and favorable concentration gradients of both components through the thickness of the photoactive layer.Such a tailored morphology acco... 相似文献
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Márcio AF Belo-Filho Franklina MB Toledo Bernardo Almada-Lobo 《The Journal of the Operational Research Society》2014,65(11):1735-1747
Setup operations are significant in some production environments. It is mandatory that their production plans consider some features, as setup state conservation across periods through setup carryover and crossover. The modelling of setup crossover allows more flexible decisions and is essential for problems with long setup times. This paper proposes two models for the capacitated lot-sizing problem with backlogging and setup carryover and crossover. The first is in line with other models from the literature, whereas the second considers a disaggregated setup variable, which tracks the starting and completion times of the setup operation. This innovative approach permits a more compact formulation. Computational results show that the proposed models have outperformed other state-of-the-art formulation. 相似文献
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Rare earth element substituted bismuth ferrites (BiFeO3) are of enormous importance as magnetoelectric materials. The polycrystalline samples of Bi
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La1−x
FeO3 (x=0, 0.2, 0.4, 0.6, 0.8) were prepared by solid-state reaction using standard ceramic method. The single-phase formation of
these compounds was confirmed by X-ray diffraction (XRD) studies. The samples with x=0, 0.2, 0.4, 0.6 are found to be orthorhombic while the sample with x=0.8 is triclinic. The dielectric constant (ε′) and dissipation factor (tan δ) were measured in the frequency range 100 Hz
to 1 MHz at room temperature and as a function of temperature at certain fixed frequencies (1 kHz, 10 kHz, 100 kHz, 1 MHz).
All the samples showed dielectric dispersion. The dielectric constant with temperature shows a broad peak; the peak temperature
shifts with frequency which reflects the relaxor-type behavior. The peak above 600 K in the measured temperature range corresponds
to antiferromagnetic ordering temperature (Néel temperature). The broadness of the peak changes with composition. The ac conductivity
as well as ε′ are found to be maximum for the sample x=0.2 at room temperature. 相似文献
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CoFe2O4-BaTiO3 composites were prepared using conventional ceramic double sintering process with various compositions. Presence of two phases
in the composites was confirmed using X-ray diffraction. The dc resistivity and thermoemf as a function of temperature in
the temperature range 300 K to 600 K were measured. Variation of dielectric constant (ɛ′) with frequency in the range 100 Hz to 1 MHz and also with temperature at a fixed frequency of 1 kHz was studied. The ac
conductivity was derived from dielectric constant (ɛ′) and loss tangent (tan δ). The nature of conduction is discussed on the basis of small polaron hopping model. The static value of magnetoelectric
conversion factor has been studied as a function of magnetic field. 相似文献
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