Investigation of the chemical heterogeneity of polyphenylenes using the condensation of methyl aryl ketones as a model reaction

The chemical heterogeneity of polyphenylenes obtained by trimerization poiycycio-condensation of acetylaromatic compounds has been investigated by GLC-MS analysis of the products of trimerization cyclocondensation of acetophenone. The mechanism for the formation of side products of the reaction is discussed. The presence of dypnone fragments in the polyphenylene structure results in a decrease in the thermal stability of these polymers.Deceased March, 1993.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1595–1601, September, 1993.     

Infrared and computational investigation of vanadium-substituted Keggin [PVnW12-nO40](n+3)- polyoxometallic anions

This study investigates complex salts of [PW(12)O(40)](3-), [PVW(11)O(40)](4-), [PV(2)W(10)O(40)](5-), and [PV(3)W(9)O(40)](6-) Keggin anions using Fourier transform infrared spectroscopy under ambient atmospheric and high-vacuum conditions and by computational methods. A detailed vibrational study suggests that the presence and amount of vanadium in these anions can be tested quickly and reliably with the help of infrared spectroscopy because the salts of these anions exhibit distinctly different infrared absorption signatures (particularly in the 1025-1250 cm(-1) region, where the P-O stretch is surrounded by a set of complex vibrations involving V-O and W-O bonds). Investigation of these salts with different countercations suggests that the overall appearance of the spectra, and thus the ability to use infrared as a diagnostic tool to identify the presence and number of vanadium atoms in Keggin structure anions, is not affected significantly. Last, it is shown that all the structures investigated are extremely stable across a wide range of temperatures.     

Complex thermal chemistry of vinyltrimethylsilane on Si(100)-2x1

The surface chemistry of vinyltrimethylsilane (VTMS) on Si(100)-2x1 has been investigated using multiple internal reflection-Fourier transform infrared spectroscopy, Auger electron spectroscopy, and thermal desorption mass spectrometry. Molecular adsorption of VTMS at submonolayer coverages is dominating at cryogenic temperatures (100 K). Upon adsorption at room temperature, chemical reaction involving rehybridization of the double bond in VTMS occurs. Further annealing induces several reactions: molecular desorption from a monolayer by 400 K, formation and desorption of propylene by 500 K, decomposition leading to the release of silicon-containing products around 800 K, and, finally, surface decomposition leading to the production of silicon carbide and the release of hydrogen as H(2) at 800 K. This chemistry is markedly different from the previously reported behavior of VTMS on Si(111)-7x7 surfaces resulting in 100% conversion to silicon carbide. Thus, some information about the surface intermediates of the VTMS reaction with silicon surfaces can be deduced.     

Synthesis of benzo[b]furan-2-thioles from 4-(2-hydroxyaryl)-1,2,3-thiadiazoles

4-(2-Hydroxyaryl)-1,2,3-thiadiazoles treated with bases decompose with nitrogen liberation and the formation of benzo[b]furan-2-thiolates. On acidifying the thiolates benzo[b]furan-2-thiols were obtained. 4-(4- and -5-Benzyloxy-2-hydroxyphenyl)-1,2,3-thiadiazoles formed analogously the corresponding benzo[b]furan-2-thiolates whose acidifying afforded polymeric compounds.     

Reagent-free modification of poly(vinyltrimethylsilane) membranes with low-temperature plasma to improve gas separation properties

Russian Chemical Bulletin -     

Paramagnetic defects induced by ion implantation in oxide glasses

Radiation defects induced by ion bombardment of multicomponent oxide glasses of five compositions (phosphates and borosilicates) were investigated by means of electron paramagnetic resonance (EPR). The samples were implanted with N⁺, O⁺, Ar⁺, Mn⁺, Cu⁺ and Pb⁺ ions at energy E=150 keV at three different doses between 3×10¹⁵ and 10¹⁷ ions/cm². The broad anisotropic EPR spectra with principal g-values answering the relationship g_z>g_y>g_x˜g_e (g_e is g-factor of free electron) were observed for the samples of all five compositions. The g-values depend on glass composition. For example, g_z ranges from 2.016 to 2.057. Computer simulation shows that the spectra of many samples are superpositions of two spectra with g-values answering the mentioned relationship. These spectra are attributed to molecular O₂⁻ ions weakly coupled with glass network. In some samples narrow almost symmetric lines with g=2.0025±0.0005 were observed. The possible radiation defects responsible for this signal are discussed.     

Dehydrative cyclocondensation reactions on hydrogen-terminated Si(100) and Si(111): an ex situ tool for the modification of semiconductor surfaces

Dehydrative cyclocondensation processes for semiconductor surface modification can be generally suggested on the basis of well-known condensation schemes; however, in practice this approach for organic functionalization of semiconductors has never been investigated. Here we report the modification of hydrogen-terminated silicon surfaces by cyclocondensation. The cyclocondensation reactions of nitrobenzene with hydrogen-terminated Si(100) and Si(111) surfaces are investigated and paralleled with selected cycloaddition reactions of nitro- and nitrosobenzene with Si(100)-2x1. Infrared spectroscopy is used to confirm the reactions and verify an intact phenyl ring and C-N bond in the reaction products as well as the depletion of surface hydrogen. High resolution N 1s X-ray photoelectron spectroscopy (XPS) suggests that the major product for both cyclocondensation reactions investigated is a nitrosobenzene adduct that can only be formed following water elimination. Both IR and XPS are augmented by density functional theory (DFT) calculations that are also used to investigate the feasibility of several surface reaction pathways, which are insightful in understanding the relative distribution of products found experimentally. This novel surface modification approach will be generally applicable for semiconductor functionalization in a highly selective and easily controlled manner.