Fabrication of Microporous Metal–Organic Frameworks in Uninterrupted Mesoporous Tunnels: Hierarchical Structure for Efficient Trypsin Immobilization and Stabilization

Hierarchically porous metal–organic frameworks (HP-MOFs) are promising in various applications. Most reported HP-MOFs are prepared based on the generation of mesopores in microporous frameworks, and the formed mesopores are connected by microporous channels, limiting the accessibility of mesopores for bulky molecules. A hierarchical structure is formed by constructing microporous MOFs in uninterrupted mesoporous tunnels. Using the confined space in as-prepared mesoporous silica, highly dispersed metal precursors for MOFs are coated on the internal surface of mesoporous tunnels. Ligand vapor-induced crystallization is employed to enable quantitative formation of MOFs in situ, in which sublimated ligands diffuse into mesoporous tunnels and react with metal precursors. The obtained hierarchically porous composites exhibit record-high adsorption capacity for the bulky molecule trypsin. The thermal and storage stability of trypsin is improved upon immobilization on the composites.     

Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

Towards molecular-scale electronics and biomolecular self-assembly

This paper provides an overview of recent research developments in the field of nanoelectronics with organic materials such as carbon nanotubes and DNA-templated nanowires. Carbon nanotubes and gold electrodes are chemically functionalized in order to contact carbon nanotubes by self-assembly. The transport properties of these nanotubes are dominated by charging effects and display clear Coulomb blockade behaviour. A different approach towards nanoscale electronics is based on the molecular recognition properties of biomolecules such as DNA. As an example, DNA is stretched between electrodes using a molecular combing technique. A two-step metallization procedure leads to the formation of highly conductive gold nanowires.     

Polarized Lidar Reflectance Measurements of Vegetation at Near-Infrared and Green Wavelengths

There is growing interest in the use of lidar for remote sensing of vegetation owing to the emergence of reliable and rugged lasers and highly sensitive detectors. Lidar remote sensing has a distinct advantage over conventional techniques in vegetation remote sensing due to its capability for three-dimensional characterization of vegetative targets. The Multiwavelength Airborne Polarimetric Lidar (MAPL) system was developed primarily for vegetation remote sensing applications from an airborne platform of up to 1,000 -m altitude. The lidar system has full waveform capture and polarimetric measurement capability at two wavelengths in the near-infrared (1064 nm) and the green (532 nm) spectral regions. This study presents preliminary ground-based lidar reflectance measurements on a variety of deciduous and coniferous trees under fully foliated conditions with a view towards tree species discrimination. Variations in the reflectance characteristics of selected deciduous trees under unfoliated and fully foliated conditions were also investigated. Our study reveals distinct differences in the reflectance characteristics of various trees.     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Chemical Constituents of Ligusticum sinensis Oliv.

The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses.     

A parametric representation of linguistic hedges in Zadeh’s fuzzy logic

This paper proposes a model for the parametric representation of linguistic hedges in Zadeh’s fuzzy logic. In this model each linguistic truth-value, which is generated from a primary term of the linguistic truth variable, is identified by a real number r depending on the primary term. It is shown that the model yields a method of efficiently computing linguistic truth expressions accompanied with a rich algebraic structure of the linguistic truth domain, namely De Morgan algebra. Also, a fuzzy logic based on the parametric representation of linguistic truth-values is introduced.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.