Charge density study under high pressure

The experimental and analytical method of the high-pressure powder experiment at BL10XU, SPring-8, is described. There is no doubt that BL10XU must be one of the most appropriate beam lines for high pressure X-ray diffraction experiment taking advantage of third generation synchrotron source. As an example of the advanced charge density study under high pressure, the structural change of Cs₂Au₂Br₆ by applying pressure is studied by Rietveld/MEM analysis. It reveals that the structural change of Cs₂Au₂Br₆ by applying pressure occurs basically at electron level, such as valence state change and chemical bonding, which may be called the electronic phase transition.     

Endoscopic Observation of Tissue by Narrowband Illumination

We propose a new illumination method for a medical endoscope: narrow band imaging (NBI), in which the spectral bandwidth of the filtered light is narrowed. To confirm how the spectral specifications of the filtered light influence a reproduced image, an experiment was conducted observing the endoscopic images of the back mucosa of a human tongue. In addition, the effect of NBI on endoscopic images was investigated through preliminary clinical tests in colonoscopy and upper gastrointestinal endoscopy. It has been shown that NBI can enhance the capillary pattern and the crypt pattern on the mucosa. These patterns are useful features for diagnosing an early cancer.     

Phase transitions of lanthanide monophosphides with NaCl-type structure at high pressures

Lanthanide monophosphides LnP (Ln = La, Ce, Pr, Nd, Sm, Gd, Tb, Tm and Yb) with a NaCl-type structure have systematically been prepared at high temperatures. Using synchrotron radiation, X-ray diffractions of LnP have been studied up to 61 GPa at room temperature. The NaCl---CsCl transition for CeP is found at around 25 GPa. First-order phase transitions of LnP (Ln = La, Pr and Nd) with the crystallographic change occur at around 24, 26 and 30 GPa, respectively. The structure of the high pressure phases of these phosphides is a body center tetragonal structure (Ln: 0, 0, 0; P: 1/2, 1/2, 1/2; space group P4/mmm), which can be seen as the distorted CsCl-type structure. The Pr---P distance in the high pressure form of PrP is 2.789 Å. This almost agrees with the sum of covalent radii of Pr and P. The Pr---P bond has the covalent character at very high pressures. Similar results are also obtained for LaP and NdP. The pressure-induced phase transitions of SmP, GdP, TbP, TmP and YbP occur at around 35, 40, 38, 53 and 51 GPa, respectively. The structure of the high pressure phase is unknown. The phase transitions of LnP with many f-electrons are not due to the mechanism of the ordinary NaCl---CsCl transition. The transition pressures of LnP increase with decreasing the lattice constants in the NaCl-type structure, which decrease with increasing atomic number of the lanthanide atoms.     

Dynamics and thermodynamics of dimerization of parallel G-quadruplexed DNA formed from d(TTAGn) (n=3-5)

Parallel G-quadruplexes formed from oligonucleotide sequences, d(TTAGn), where n = 3-5, have been shown to form a dimer through end-to-end stacking of 3'-terminal G-tetrads. The monomers and dimers of the G-quadruplexes are in dynamic equilibrium with an exchange rate of approximately 1 s-1. A thermodynamic study demonstrated that the dimerization of the G-quadruplexes is largely enthalpic in origin.     

Radiation damage in InGaAs photodiodes by 1 MeV fast neutrons

Irradiation damage in In_0.53Ga_0.47As p-i-n photodiodes by 1 MeV fast neutrons has been studied as a function of fluence for the first time, and the results are discussed in this paper. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The induced lattice defects in the In_0.53Ga_0.47As epitaxial layers and the InP substrate are studied by Deep Level Transient Spectroscopy (DLTS) methods. In the In_0.53Ga_0.47As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of the type of radiation source on the device degradation is then discussed by comparison to 1 MeV electrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). The radiation source dependence of performance degradation is attributed to the difference of mass between the two irradiating particles and the probability of nuclear collision for the formation of lattice defects.     

Synthesis of (±)-ascochlorin,an antiviral antibiotic

(±)-Ascochlorin, 5-chloro-2, 4-dihydroxy-6-methyl-3-[(2$\text{E}$, 4$\text{E}$)-5-(1,2,6-trimethyl-3-oxocyclohexyl)3-methyl-3,4-pentadienyl] benzaldehyde, was synthesized in 14 steps from (±)-3,4-dimethyl-2-cyclohexenone.     

A facile preparation of o-acelated β-d-ribofuranosyl cyanide,an important intermediate of c-nucleoside synthesis

Tri-O-benzoyl and tri-O-acetyl derivatives of the title compound are obtained from the corresponding 1-O-acetates in good yields by treatment with cyanotrimethylsilane.     

Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy

A new hydride vapor phase epitaxy (HVPE)-based approach for the fabrication of freestanding GaN (FS-GaN) substrates was investigated. For the direct formation of low-temperature GaN (LT-GaN) layers, the growth parameters were optimized: the polarity of ZnO, the growth temperature, and the V/III ratio. The FS-GaN layer was achieved by gas etching in an HVPE reactor. A fingerprint of Zn out-diffusion was detected in the photoluminescence measurements, especially for the thin (80 μm) FS-GaN film; however, a thicker film (400 μm) was effectively reduced by optimization of GaN growth.     

Pulse radiolysis study of ion-species effects on the solvated electron in alkylammonium ionic liquids

The spectra and kinetic behavior of solvated electrons (e_sol⁻) in alkyl ammonium ionic liquids (ILs), i.e. N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEMMA-TFSI), N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium tetrafluoroborate (DEMMA-BF₄), N,N,N-trimethyl-N-propylammonium bis(trifluoromethanesulfonyl)imide (TMPA-TFSI), N-methyl-N-propylpiperidinium bis(trifluoromethanesulfonyl)imide (PP13-TFSI), N-methyl-N-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P13-TFSI), and N-methyl-N-butylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P14-TFSI) were investigated by the pulse radiolysis method. The e_sol⁻ in each of the ammonium ILs has an absorption peak at 1100 nm, with molar absorption coefficients of 1.5–2.3×10⁴ dm³ mol⁻¹ cm⁻¹. The e_sol⁻ decayed by first order with a rate constant of 1.4–6.4×10⁶ s⁻¹. The reaction rate constant of the solvated electron with pyrene (Py) was 1.5–3.5×10⁸ dm³ mol⁻¹ s⁻¹ in the various ILs. These values were about one order of magnitude higher than the diffusion-controlled limits calculated from measured viscosities. The radiolytic yields (G-value) of the e_sol⁻ were 0.8–1.7×10⁻⁷ mol J⁻¹. The formation rate constant of e_sol⁻ in DEMMA-TFSI was 3.9×10¹⁰ s⁻¹. The dry electron (e_dry⁻) in DEMMA-TFSI reacts with Py with a rate constant of 7.9×10¹¹ dm³ mol⁻¹ s⁻¹, three orders of magnitude higher than that of the e_sol⁻ reactions. The G-value of the e_sol⁻ in the picosecond time region is 1.2×10⁻⁷ mol J⁻¹. The capture of e_dry⁻ by scavengers was found to be very fast in ILs.