排序方式: 共有61条查询结果,搜索用时 15 毫秒
1.
Alexander Soshnikov 《Journal of statistical physics》2003,113(3-4):611-622
We extend the main result of the companion paper J. Stat. Phys.
113:595–610 to the case of the pfaffian ensembles. 相似文献
2.
G. E. Cirlin V. G. Dubrovskii I. P. Soshnikov N. V. Sibirev Yu. B. Samsonenko A. D. Bouravleuv J. C. Harmand F. Glas 《固体物理学:研究快报》2009,3(4):112-114
We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
3.
We derive an elementary formula for Janossy densities for determinantal point processes with a finite rank projection-type kernel. In particular, for =2 polynomial ensembles of random matrices we show that the Janossy densities on an interval I can be expressed in terms of the Christoffel–Darboux kernel for the orthogonal polynomials on the complement of I. 相似文献
4.
V. N. Soshnikov E. S. Trekhov A. F. Fomenko Yu. m. Khoshev 《Journal of Applied Mechanics and Technical Physics》1971,12(6):814-821
This study presents a quantitative evaluation of the influence of radiation upon the parameters of a long induced discharge in argon at atmospheric pressure. Radiation heat transfer in the optically transparent tin plasma layers with thickness of the order of several centimeters) and reabsorption spectral intervals is examined. Experimental error produced by inaccurate knowledge of the transfer and optical characteristics of the plasma is evaluated. The effect of convection on radial temperature profile is evaluated.Translated from Zhurnal Prikladnoi Mekhaniki i Tekhnicheskoi Fiztki, No. 6, pp. 35–43, November–December, 1971. 相似文献
5.
V. N. Soshnikov 《Russian Physics Journal》1971,14(12):1609-1614
It is suggested to solve the problem of resonance vibrational excitation of diatomic molecules colliding with slow electrons without using a formal expansion in wave functions with complex eigenvalues. The main point is to overcome the difficulties associated with the necessity of considering at the same time a large number of inelastic channels so as to account for the long range part of the interaction potential. In the model proposed inelastic scattering is determined by the parameters of a single interaction potential, determining also elastic scattering. As a result we obtain as a special case an equation similar in structure to that of Herzenberg and Mandl [1] for evaluating cross sections. As an example numerical calculations were performed for spherical square well potentials, indicating the presence of characteristic resonance cross sections already in this simplest case.Translated from Izvestiya VUZ. Fizika, No. 12 pp. 7–13 December, 1971. 相似文献
6.
Alexander Bufetov Sevak Mkrtchyan Maria Shcherbina Alexander Soshnikov 《Journal of statistical physics》2013,152(1):1-14
We show that beta ensembles in Random Matrix Theory with generic real analytic potential have the asymptotic equipartition property. In addition, we prove a Central Limit Theorem for the density of the eigenvalues of these ensembles. 相似文献
7.
We consider the limiting spectral distribution of matrices of the form \(\frac{1}{2b_{n}+1} (R + X)(R + X)^{*}\), where X is an \(n\times n\) band matrix of bandwidth \(b_{n}\) and R is a non random band matrix of bandwidth \(b_{n}\). We show that the Stieltjes transform of ESD of such matrices converges to the Stieltjes transform of a non-random measure. And the limiting Stieltjes transform satisfies an integral equation. For \(R=0\), the integral equation yields the Stieltjes transform of the Marchenko–Pastur law. 相似文献
8.
Feyer V Plekan O Kivimäki A Prince KC Moskovskaya TE Zaytseva IL Soshnikov DY Trofimov AB 《The journal of physical chemistry. A》2011,115(26):7722-7733
Core-level X-ray photoemission and near-edge X-ray absorption fine structure spectra of 5-methylcytosine, 5-fluorocytosine, and isocytosine are presented and discussed with the aid of high-level ab initio calculations. The effects of the methylation, halogenation, and isomerization on the relative stabilities of cytosine tautomers are clearly identified spectroscopically. The hydroxy-oxo tautomeric forms of these molecules have been identified, and their quantitative populations at the experimental temperature are calculated and compared with the experimental results and with previous calculations. The calculated values of Gibbs free energy and Boltzmann population ratios are in good agreement with the experimental results characterizing tautomer equilibrium. 相似文献
9.
R. R. Reznik K. P. Kotlyar I. V. Il’kiv I. P. Soshnikov S. A. Kukushkin A. V. Osipov E. V. Nikitina G. E. Cirlin 《Physics of the Solid State》2016,58(10):1952-1955
The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two. 相似文献
10.