Classification of hydrides according to features of band structure

Band structure of hydrides has been studied by density functional calculations. From analysis of band structures, it is found that, similar to semiconductors, some hydrides possess open fundamental band gap, and can be classified according to the following three characteristic features. The first is based on the value of the fundamental band gap and, therefore, the hydrides have been classified as narrow or wide band gap materials. The second feature is based on a comparison of the relative location in k space of the bottommost conduction band and topmost valence band (VB). Thus, hydrides can be classified as either direct or indirect band gap materials. The third feature is based on the origin of the topmost valence band and depends on the dominant contribution of s-, p-, and d-electrons to the topmost VB. According to this criterion, hydrides can be classified as type s, p, d or hybridised materials. This classification will be useful in the application of hydrides for the construction and processing of electronic devices within the framework of the recent innovations in ‘hydride electronics’.     

Hydrides as materials for semiconductor electronics

Systematic studies using density functional theory have shown that some hydrides possess the features of semiconductors. These features include larger fundamental band gap, well dispersed bottom-most conduction band and/or top-most valence band, small electron/hole effective masses and small intrinsic carrier concentration. It is demonstrated that depending upon the composition, hydrides possess a wide range of band gap values and hence they can be regarded as materials for narrow to wide band gap semiconducting applications. The possibility of designing hydride-based p–n junctions, and also their advantages as well as deficiencies compared to existing oxide semiconductors, are discussed. Replacing oxide-based semiconductors by hydrides can help to avoid problems such as formation of an oxide layer, band offsets, large concentration of defect states at the interface between the oxide and semiconductor, etc. Moreover, hydrides can be regarded as an alternative to conventional semiconductors and hence can be used in future-generation electronic devices called “hydride electronics”.     

First-principles study of SnS electronic properties using LDA,PBE and HSE06 functionals

Recently, tin sulphide (SnS) has emerged as a promising alternative to conventional CIGS and CZTC for use in solar cells, possessing such properties as non-toxicity, low cost and production stability. SnS has a high theoretically predicted efficiency above 20%, but the experimentally achieved efficiency so far is as low as 4.36%. The reason for the low achieved efficiency is unclear. One of the powerful tools to get deeper insights about the nature of the problem is first-principles calculation approaches. That is why SnS has become an attractive subject for first-principles calculations recently. Previously calculated data, however, show a widespread of such fundamental value as the bandgap varying from 0.26 to 1.26 eV. In order to understand a reason for that, in this work, we concentrate on a systematic study of calculation parameters effects on the resulting electronic structure, with the particular attention paid to the influence of the exchange-correlation functional chosen for calculations. Several exchange-correlation functionals (LDA, PBE and HSE06) were considered. The systematic analysis has shown that the bandgap variation can result from a tensile/compressive hydrostatic pressure introduced by non-equilibrium lattice parameters used for the calculations. The study of the applicability of three functionals has shown that HSE06 gives the best match to both experimentally obtained bandgap and the XPS valence band spectra. LDA underestimates the bandgap but qualitatively reproduces experimentally measured valence DOS similar to that of HSE06 in contrast to PBE. PBE underestimates the bandgap and does not match to the measured XPS spectra.     

Similarity of optical properties of hydrides and semiconductors for antireflection coatings

The electronic structure and optical properties of the complex hydrides Ca₂FeH₆, Ca₂RuH₆, Mg₂FeH₆, Mg₂RuH₆, Sr₂FeH₆, Sr₂RuH₆ and Sr₂OsH₆ were studied using first-principles calculations. Optical spectra of the hydrides were compared with those of SiN _x , In₂O₃ and ZnO determined from theoretical calculations and measured experimentally. Based on an analysis of band structure, it is found that the electrical conductivity of the hydrides is expected to be poor. However, optical properties of the hydrides in the energy range 0–3 eV are found to be almost the same as those of SiN _x , In₂O₃, ZnO and TiO₂. Hydrides are suggested to be used as antireflection layers and for passivation of surface and bulk defects. This finding could be useful for electronic device technology including solar cells.     

Scaling up Studies on PEMFC Using a Modified Serpentine Flow Field Incorporating Porous Sponge Inserts to Observe Water Molecules

Flooding of the cathode flow channel is a major hindrance in achieving maximum performance from Proton Exchange Membrane Fuel Cells (PEMFC) during the scaling up process. Water accumulated between the interface region of Gas Diffusion Layer (GDL) and rib of the cathode flow field can be removed by the use of Porous Sponge Inserts (PSI) on the ribs. In the present work, the experimental investigations are carried out on PEMFC for the various reaction areas, namely 25, 50 and 100 cm². Stoichiometry value of 2 is maintained for all experiments to avoid variations in power density obtained due to differences in fuel utilization. The experiments include two flow fields, namely Serpentine Flow Field (SFF) and Modified Serpentine with Staggered provisions of 4 mm PSI (4 mm × 2 mm × 2 mm) Flow Field (MSSFF). The peak power densities obtained on MSSFF are 0.420 W/cm², 0.298 W/cm² and 0.232 W/cm² compared to SFF which yields 0.242 W/cm², 0.213 W/cm² and 0.171 W/cm² for reaction areas of 25, 50 and 100 cm² respectively. Further, the reliability of experimental results is verified for SFF and MSSFF on 25 cm² PEMFC by using Electrochemical Impedance Spectroscopy (EIS). The use of 4 mm PSI is found to improve the performance of PEMFC through the better water management.     

Strong Coulomb correlation effects in ZnO

The electronic structure, band parameters, and optical spectra of wurtzite-type ZnO were studied by first-principles calculations within different approximations of the density functional theory. The local-density approximation underestimates the band gap, the energy levels of the Zn-3d states, the band dispersion, the crystal-field splitting, the spin-orbit interaction, and location of peaks in the optical spectra. The generalized-gradient approximation slightly corrects the discrepancies with the experimental findings and it shows good agreement for the optical spectra with experimental data at energies 10-20 eV for E⊥c. Studies within the local-density approximation with the multiorbital mean-field Hubbard potential show that strong Coulomb correlations are in operation. From effective mass calculations it is found that holes are much heavier and more anisotropic than the conduction-band electrons in ZnO.