Shape-persistent cyclyne-type azamacrocycles: synthesis, unusual light-emitting characteristics, and specific recognition of the Sb(V) ion

Simple members of arene-azaarenecyclynes as a novel family of geometrically-controlled and shape-persistent azamacrocycles have been synthesized. Noteworthy is the specific recognition function for Sb(V). The synthesized azamacrocycles, in particular the Sb(V) complex, have unusually strong light-emitting property.     

CIDEP studies of a radical pair produced upon excitation of the molecular complex of acridine and acridan in the solid state at room temperature

The time-resolved ESR signal of a triplet radical pair was detected upon excitation of a solid mixture of acridine and acridan at room temperature. The ZFS parameters of the triplet radical pair were determined to be D=−0.0100 cm⁻¹ and E=0.00053 cm⁻¹. The structure of the radical pair is discussed on the basis of the data.     

Synthesis and properties of novel thiaarenecyclynes

Novel thiaarenecyclynes 3 and 4 in which two thioether units and two benzene rings are alternately inserted into the single bonds of cyclooctatetrayne are synthesized. Their unique properties are described.     

Fundamental studies on thyroid stimulating hormone immunoradiometric assay kit (TSH RIABEAD II)

We have reported fundamental studies on the TSH immunoradiometric assay, using TSH RIABEAD II kit (Dainabot). The sensitivity of the assay was 0.03 mu IU/ml and its C.V. was 27.2%. Intra- and inter-assay C.V. were less than 5%. Dilution test and recovery test were good. Serum TSH level was 0.3-4.0 mu IU/ml in normal subjects, less than 0.03 mu IU/ml in untreated Graves' disease and subacute thyroiditis. Therefore, it was found that the clear difference exist in serum TSH levels between normal subjects and patients with untreated Graves' disease. There was a well correlation on the serum TSH levels between this method and TSH radioimmunoassay kit (Amerlex TSH, r = 0.983). Especially, the measurement of serum TSH levels, using immunoradiometric assay kit, was useful for the diagnosis of patients with Graves' disease.     

Adsorption Characteristics in Reversed-Phase Liquid Chromatography Using Ethanol/Water Mixed Solvent

Adsorption characteristics were studied in a reversed-phase liquid chromatography consisting of an octadecylsilyl (ODS)-silica gel and ethanol/water mixture (70/30, v/v), and were compared with corresponding results obtained by using methanol/water and acetonitrile/water mixtures (70/30, v/v) as mobile phase. Similar tendencies were observed for some adsorption characteristics in the three chromatographic systems. However, the magnitude of the characteristics was not entirely identical in the three systems. Surface diffusion was dominant for intraparticle diffusion in the ODS-silica gel particles irrespective of the type of the organic modifiers in mobile phases. A few correlations were confirmed with regard to surface diffusion, i.e., an enthalpy-entropy compensation and a linear free-energy relation. The analogous correlations on surface diffusion phenomena suggest the similarity in the mechanism of surface diffusion in the three chromatographic systems.     

Influence of substrate temperature on nitridation of (0 0 1) GaAs using RF-radical source

The mechanism of nitridation of (0 0 1) GaAs surface using RF-radical source was systematically studied with changing substrate temperature, nitridation time and supplying As molecular beam. It was found from atomic forth microscopy (AFM) measurements that supplying As is very important to suppress the re-evaporation of As atoms and to keep the surface smooth. Reflection high-energy electron diffraction (RHEED) measurements shows that surface lattice constant (SLC) of GaAs of 0.565 nm decreases with increasing the substrate temperature and that it finally relaxes to the value of c-GaN of 0.452 nm, at 570 °C in both [1 1 0] and [1¯ 1 0] directions without concerning with the supply of As molecular beam. But, in the medium temperature range (between 350 and 520 °C), SLC of [1 1 0] direction was smaller than that of [1¯ 1 0] direction. This suggests a relation between the surface structure and the relaxing mechanism of the lattice. The valence band discontinuity between the nitridated layer and the GaAs layer was estimated by using X-ray photoemission spectroscopy (XPS). It was between 1.7 and 2.0 eV, which coincides well with the reported value of c-GaN of 1.84 eV. This suggests that the fabricated GaN layer was in cubic structure.