Synthesis and novel reactivity of halomethyldimethylsulfonium salts

Iodomethyl-, chloromethyl-, and fluoromethyldimethylsulfonium salts, 4b-d, have been synthesized and are observed to be highly reactive molecules that exhibit extraordinary diversity with respect to the nature of their reactivity, undergoing facile direct substitution (S(N)2) reactions, but also being highly susceptible to electron-transfer reactions. Cyclic voltametry experiments indicated that the iodomethyldimethylsulfonium compound, 4b, is a potent electron acceptor, even surpassing the reactivity of perfluoro-n-alkyl iodides in that capacity. The iodo- and chloromethyldimethylsulfonium salts, 4b,c, as well as the analogous iodomethyltrimethylammonium salt, 3a, are shown to be reactive SET acceptors.     

Potentiometric measurement of cell volume changes and intracellular ion concentrations under voltage-clamp conditions in invertebrate nerve cells

Because changes in cell volume might disturb the normal function of animal cells, most cells are endowed with volume-regulating mechanisms. Experimentally induced changes in cell volume are often paralleled by changes in the membrane potential, which might affect a variety of transport processes across the cell membrane and, in turn, volume regulation [1, 2]. We have shown previously that multi-barrelled ion-selective microelectrodes are useful tools for measurement of cell volume and the intracellular concentrations of ions that might be relevant to volume regulation [1]. To investigate whether voltage-dependent transport processes are involved in cell-volume regulation we combined the potentiometric technique of ion-selective microelectrodes with the voltage-clamp technique. This combination enables simultaneous recording of cell volume, relevant intracellular ion concentrations, and ion currents across the cell membrane at a fixed membrane potential.     

The single-mode rate equations for semiconductor lasers with thermal effects

A mathematical model describing the coupling of electrical,optical and thermal effects in semiconductor lasers is introduced.Numerical and asymptotic solutions are derived, including expressionsfor key physical quantities such as the initial time delay,the frequency of spike oscillation and the temperature rise,together with its influence on the photon density, the electronconcentration and the threshold current. The consequences ofthermal effects in reducing efficiency are thus quantified.     

On <Emphasis Type="Italic">g</Emphasis>-functions for Laguerre function expansions of Hermite type

We examine weighted L ^p boundedness of g-functions based on semigroups related to multi-dimensional Laguerre function expansions of Hermite type. A technique of vector-valued Calderón–Zygmund operators is used.