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1.
应力系数的标定作为超声应力检测最为关键的环节,直接决定应力检测结果的准确性。传统的应力系数试验标定对于被测物的表面粗糙度、耦合剂厚度、声匹配块与被测物接触力等因素十分敏感,但缺少基本参照值。基于COMSOL建立多物理场耦合的超声应力检测模型,施加不同的拉伸载荷,计算临界折射纵波到达时间与不同应力值之间的关系,模拟标定45#钢的超声应力系数为13.7MPa/ns。单轴水平拉伸试验标定的45#钢应力系数为16.5MPa/ns。结果表明,通过两种方法标定的应力系数较为接近,试验标定的应力系数偏大,这是由于有限元方法能够消除试验过程中各种不确定因素对声时精确测量所造成的影响,能够更加纯粹的反映材料的声弹性效应,因此具有作为基础数据的参考价值。有限元方法作为传统试验方法的补充,可以减小试验标定数据的离散性,提高超声应力检测结果的可信度。 相似文献
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采用二苯碳酰二肼为络合剂,正戊醇为萃取剂,乙醇为助溶剂,建立了微珠析相微萃取-石墨炉原子吸收法测定地质样品中痕量Cr的分析方法。实验详细探讨了微珠析相微萃取的析相条件、石墨炉原子吸收工作参数及共存离子的干扰,优化了体系萃取条件。实验结果表明:微珠析相微萃取既起到了分离富集的作用,在石墨炉升温程序中又起到了基体改进剂的作用;当萃取剂用量为0.2~1.5 mL时,使之与水完全互溶所需助溶剂体积约为水相体积的0.2~0.5倍;方法线性范围为0~10 μg·L-1,检出限为0.057 μg·L-1,相对标准偏差(RSD)为3.3%(c= 2.5 μg·L-1,n=11);当萃取剂用量为1.5 mL、水相体积15 mL时,与直接溶液进样相比其灵敏度可提高10倍。所建立的方法用于地质标准参考物质AGV-2和G-2中Cr的测定,测定值与参考值具有较好的一致性。 相似文献
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污水处理厂及受纳水体样品的三维荧光光谱解析 总被引:1,自引:0,他引:1
采用三维荧光光谱表征了污水厂各处理单元及受纳水体上下游的样品,应用平行因子分析方法获得了样品中各主成分的激发发射光谱图及荧光强度得分矩阵。结果表明,类蛋白质和类富里酸物质是污水厂和受纳水体样品的主要荧光组分。污水厂进水样品的类蛋白质荧光较强,后续各处理单元样品的荧光强度显著下降。受纳水体上游样品的类蛋白质荧光较弱,经过城区各取样点的类蛋白质荧光显著增加,而污水厂排放口上游荧光强度则显著高于下游。类蛋白质荧光强度得分可与样品COD值建立相关曲线,污水厂与受纳水体样品的相关系数分别为0.930和0.913,类蛋白质荧光可以反映样品点的有机污染程度。该研究为污水处理厂的运行及其对受纳水体影响提供了新的思路和方法。 相似文献
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From electronic excited state theory to the property predictions of organic optoelectronic materials
We introduce here a work package for a National Natural Science Foundation of China Major Project. We propose to develop computational methodology starting from the theory of electronic excitation processes to predicting the opto-electronic property for organic materials, in close collaborations with experiments. Through developing methods for the electron dynamics, considering superexchange electronic couplings, spin-orbit coupling elements between excited states, electron-phonon relaxation, intermolecular Coulomb and exchange terms we combine the statistical physics approaches including dynamic Monte Carlo, Boltzmann transport equation and Boltzmann statistics to predict the macroscopic properties of opto-electronic materials such as light-emitting efficiency, charge mobility, and exciton diffusion length. Experimental synthesis and characterization of D-A type ambipolar transport material as well as novel carbon based material will provide a test ground for the verification of theory. 相似文献
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ZHU RongHua XIE HuiMin ZHU JianGuo LI YanJie CHE ZhiGang ZOU ShiKun 《中国科学:物理学 力学 天文学(英文版)》2014,57(4):716-722
In this paper,a new method combining focused ion beam(FIB)and scanning electron microscope(SEM)Moirétechnique for the measurement of residual stress at micro scale is proposed.The FIB is employed to introduce stress relief like the macro ring-core method and fabricate gratings with a frequency of 5000 lines/mm on the measured area of the sample surface.Three groups of gratings in different radial directions are manufactured in order to form a micro-scale strain rosette.After milling ring-core by FIB,the deformation incurred by relief of the stress will be recorded with the strain rosette.The displacement/strain field can be measured using SEM scanning Moiréwith random phase-shifting algorithm.In this study,the Nickel alloy GH4169 sample(which was processed by laser shock peening)is selected as a study object to determine its residual stress.The results showed that the components of the in-plane principal stresses were-359 MPa and-207 MPa,respectively,which show good agreement with the results obtained from the available literature. 相似文献
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DING GuoJian GUO LiWei XING ZhiGang CHEN Yao XU PeiQiang JIA HaiQiang ZHOU JunMing & CHEN Hong Beijing National Laboratory of Condensed Matter Physics 《中国科学:物理学 力学 天文学(英文版)》2010,(1)
Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved. 相似文献