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1.
DING GuoJian GUO LiWei XING ZhiGang CHEN Yao XU PeiQiang JIA HaiQiang ZHOU JunMing & CHEN Hong Beijing National Laboratory of Condensed Matter Physics 《中国科学:物理学 力学 天文学(英文版)》2010,(1)
Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved. 相似文献
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ZhiGang Li ZhiQiang Gao HaiShan Wang Hui Zhang XinYan Zhao BaoXiu Mi Wei Huang 《中国科学:化学(英文版)》2012,55(12):2562-2566
An inexpensive material,i.e.,tetranuclear zinc(Ⅱ) complex,(Zn4O(AID)6) [AID = 7-azaindolate],was utilized as a cathode buffer in organic photovoltaic(OPV) devices,leading to the improvement of device performance.Compared to OPV devices based on a conventional cathode buffer of TPBi(1,3,5-tris(2-N-phenylbenzimidazolyl)benzene),although the freshly prepared devices showed similar performance,when heated to a series of high temperatures under air,the short circuit current and the open circuit voltage of the Zn4O(AID)6 devices dropped more slowly,indicating the superiority of using Zn4O(AID)6 as a cathode buffer over TPBi in OPV devices. 相似文献
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本文主要介绍了开放式投资基金的流动性概念和指标体系设计,并运用指标进行实证检验,分析基金的流动性及其实际意义。 相似文献
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通过结合杂化密度泛函和前线轨道理论与弹性散射格林函数方法研究了BE- MP(benzene-1,4-di-ethynyl-4-mercaptophenyl)和TEMP(thiophene-2,5-di-ethynyl-4- mercaptophenyl)两分子结的输运性质。基于杂化密度泛函方法计算两扩展分子电子结构的基础上,计算了两分子的输运性质.计算结果显示:电流增加来源于电极和分子轨道的共振;电导曲线呈现出平台特征.在此基础上从扩展分子A(Au-BEMP-Au)中间的苯环的旋转而引起电流减小的角度解释了负微分电阻现象. 相似文献
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XuHai Yang ZhiGang Li ChuGang Feng Ji Guo HuLi Shi GuoXiang Ai FengLei Wu RongChuan Qiao 《中国科学G辑(英文版)》2009,52(3):333-338
A geostationary (GEO) satellite may serve as a navigation satellite, but there is a problem that maneuvers frequently occur and the forces are difficult to model. Based on the technique of determining satellite orbits by transfer, a predicted orbit with high accuracy may be achieved by the method of statistical orbit determination in case of no maneuver force. The predicted orbit will soon be invalid after the maneuver starts, and it takes a long time to get a valid orbit after the maneuver ends. In order to improve ephemeris usability, the method of rapid orbit forecasting after maneuvers is studied. First, GEO satellite movement is analyzed in case of maneuvers based on the observation from the orbit measurement system by transfer. Then when a GEO satellite is in the free status just after maneuvers, the short arc observation is used to forecast the orbit. It is assumed that the common system bias and biases of each station are constant, which can be obtained from orbit determination with long arc observations. In this way, only 6 orbit elements would be solved by the method of statistical orbit determination, and the ephemeris with high accuracy may be soon obtained. Actual orbit forecasting with short arc observation for SINOSAT-1 satellite shows that, with the tracking network available, the precision of the predicted orbit (RMS of O-C) can reach about 5 m with 15 min arc observation, and about 3 m with 30 min arc observation. Supported by the National High Technology Research and Development Program of China (Grant No. 2006AA12Z322), the National Basic Research Program of China (Grant No. 2007CB815503), and the West Light Program of Chinese Academy of Sciences (Grant No. 2007LH01) 相似文献
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基于FFT的薄膜厚度干涉测量新方法 总被引:1,自引:0,他引:1
在研究二维FFT法进行干涉测试基本原理的基础上,提出一种基于二维FFT的薄膜厚度测量新方法。利用搭建的泰曼-格林型干涉系统,用CCD接收、采集卡采集,可获得被测膜层的干涉条纹图像。编制算法处理软件,可实现对干涉条纹图中薄膜边缘识别、区域延拓、滤波、波面统一等的处理,从而获得带有薄膜信息的面形分布,实现对薄膜样片厚度的自动化测量。研究结果表明:所测薄膜厚度的峰谷值为0.2562,均方根值为0.068λ,说明采用基于FFT的薄膜厚度干涉测量新方法测量薄膜厚度具有较高的精度。 相似文献
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