Space-Confined Atomic Clusters Catalyze Superassembly of Silicon Nanodots within Carbon Frameworks for Use in Lithium-Ion Batteries

Incorporating nanoscale Si into a carbon matrix with high dispersity is desirable for the preparation of lithium-ion batteries (LIBs) but remains challenging. A space-confined catalytic strategy is proposed for direct superassembly of Si nanodots within a carbon (Si NDs⊂C) framework by copyrolysis of triphenyltin hydride (TPT) and diphenylsilane (DPS), where Sn atomic clusters created from TPT pyrolysis serve as the catalyst for DPS pyrolysis and Si catalytic growth. The use of Sn atomic cluster catalysts alters the reaction pathway to avoid SiC generation and enable formation of Si NDs with reduced dimensions. A typical Si NDs⊂C framework demonstrates a remarkable comprehensive performance comparable to other Si-based high-performance half LIBs, and higher energy densities compared to commercial full LIBs, as a consequence of the high dispersity of Si NDs with low lithiation stress. Supported by mechanic simulations, this study paves the way for construction of Si/C composites suitable for applications in future energy technologies.     

Pure tetrahedral quadruple systems with index two

An oriented tetrahedron defined on four vertices is a set of four cyclic triples with the property that any ordered pair of vertices is contained in exactly one of the cyclic triples. A tetrahedral quadruple system of order $n$ with index $\lambda$, denoted by ${\text{TQS}}_{\lambda }\left(n\right)$, is a pair $\left(X,\mathrm{?}\right)$, where $X$ is an $n$‐set and $\mathrm{?}$ is a set of oriented tetrahedra (blocks) such that every cyclic triple on $X$ is contained in exactly $\lambda$ members of $\mathrm{?}$. A ${\text{TQS}}_{\lambda }\left(n\right)$ is pure if there do not exist two blocks with the same vertex set. When $\lambda =1$, the spectrum of a pure TQS $\left(n\right)$ has been completely determined by Ji. In this paper, we show that there exists a pure ${\text{TQS}}_2\left(n\right)$ if and only if $n\equiv 1,2\left(\mathrm{mod}3\right)$ and $n\ge 7$. A corollary is that a simple ${\text{QS}}_4\left(n\right)$ also exists if and only if $n\equiv 1,2\left(\mathrm{mod}3\right)$ and $n\ge 7$.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

二(β-二酮)氧钒(Ⅳ)与含氮碱加合物的合成和表征

合成了一系列VO(β-dik)_2L类型加合物,其中β-dik分别为苯甲酰丙酮,2-噻吩甲酰三氟丙酮,L3-甲基吡啶、4-甲基吡啶、吗啉、异喹啉,VO(bza)_2Mor、VO(tta)_2Mor、VO(tta)_2iso-q为首次合成,并通过元素分析、摩尔电导、红外光谱、电子光谱、顺磁共振波谱等对加合物进行了较系统的表征工作。     

VO(PMBP)2·nL型加合物的合成和性质研究

本文合成了四个VO(PMBP)₂·nL型加合物,元素分析确定其组成为VO(PMBP)₂·2H₂O、VO(PMBP)₂·py、VO(PMBP)₂·β-MP·H₂O、VO(PMBP)₂·γ-MP,其中PMBP、py、β-MP、γ-MP分别为1-苯基-3-甲基-4-苯甲酰吡唑酮-5,吡啶,3-甲基吡啶、4-甲基吡啶.通过摩尔电导、差热热重分析、红外光谱、电子光谱、顺磁共振波谱等方法研究了加合物的性质.     

Room temperature deposition of amorphous SiC thin films using low energy ion bombardment

Silicon carbide (SiC) films are prepared by single- and dual-ion beam sputtering deposition at room temperature, respectively. An assisting argon ion beam (ion energy Ei=150 eV) bombards directly the substrate surface to modify the SiC film surface. The thin films are characterized by the Fourier transform infrared spectroscopy (FTIR) and the Raman spectra. With assisting ion beam bombardment, the density of the Si–C bond in the film increases. Meanwhile, the excess carbon or the size of the sp² bonded clusters and the amorphous Si (a-Si) phase decrease. These results indicate that the composition of the films is mainly Si–C bond. UV-vis transmission shows that the E_opt increases steadily from 1.85 eV for the amorphous SiC (a-SiC) films without bombardment to about 2.29 eV for those with assisting ion beam bombardment.     

浙江萧山、舟山和福建集美臭鼩血红蛋白、血清蛋白电泳比较研究

本文用血红蛋白的薄层等电聚焦技术对浙江萧山、舟山和福建集美的三地臭鼩进行比较,结果显示:大陆(萧山与集美)和海岛(舟山)之间的带谱存在差异.大陆有6条区带,海岛的带谱变化较大,存在四种不同类型.用血清蛋白的SDS-聚丙烯酰胺凝胶电泳技术和血清蛋白的薄层等电聚焦技术对上述三地臭鼩的分析表明:海岛个体血清蛋白的成份和在血液中相对含量较大陆为少,而大陆萧山和集美的血清蛋白在血液中的相对含量和成份亦略有不同.