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Youssef Ammaih Abderrazak Lfakir Bouchaib Hartiti Abderraouf Ridah Meryame Siadat Philippe Thevenin 《Molecular Crystals and Liquid Crystals》2016,627(1):176-182
ABSTRACTZnO transparent conductive films were deposited on glass substrates by sol-gel spin coating method. Taguchi method was used to find the optimal deposition parameters, three influential parameters were selected in this experiment, Concentration of zinc (II) ions. Zn2+, annealing temperature Tr and pre-annealing temperature TP. By employing the analysis of variance, we found that the annealing temperature Tr and the precursor Zn2+ are the most influencing parameters on the properties of ZnO films. Under the optimized deposition conditions, the ZnO films showed high crystal quality, and high transmittance of 90% in the visible region. 相似文献
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Kotbi Ahmed Hartiti Bouchaib Ridah Abderraouf Thevenin Philippe 《Optical and Quantum Electronics》2016,48(1):1-9
Optical and Quantum Electronics - In this paper, a variable-coefficient generalized nonlinear Schrödinger equation, which can be used to describe the nonlinear phenomena in the optical fiber,... 相似文献
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Youssef Ammaih Abderrazak Lfakir Bouchaib Hartiti Abderraouf Ridah Philippe Thevenin Meryane Siadat 《Optical and Quantum Electronics》2014,46(1):229-234
Undoped and aluminum-doped ZnO thin films are prepared by the sol–gel spin-coating process. Zinc acetate dihydrate, ethanol and mono-ethanolamine are used as precursor, solvent and stabilizer, respectively. The atomic percentage of dopant in solution were [Al/Zn] = 1 %, 2 % and 3 %. The effect of Al doping on the optical and electrical properties of ZnO films was investigated by X-ray diffraction (XRD), Four-Point probe technique and UV–visible spectrophotometery. The results from the X-ray diffraction show that the pure ZnO thin films had a polycrystalline structure of the hexagonal Wurtzite Type. A minimum resistivity of $3.3 \times 10^{-3} \Omega \cdot \mathrm{cm}$ was obtained for the film doped with 2 mol % Al. Optical transmissions reveal a good transmittance within the visible wavelength spectrum region for all of the films. The value of the band gap is enhanced from 3.21 eV (undoped ZnO) to 3.273 eV (Al/Zn = 3 %), the increase in the band gap can be explained by the Burstein–Moss effect. 相似文献
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Ziti Ahmed Hartiti Bouchaib Labrim Hicham Batan Abdelkrim Fadili Salah Ridah Abderraouf Tahri Mounia Belafhaili Amine Thevenin Philippe 《Journal of Sol-Gel Science and Technology》2021,99(1):252-262
Journal of Sol-Gel Science and Technology - Quaternary semiconductor Cu2ZnSnS4 absorber material was synthesized by the sol-gel method deposited by the dip-coating technique on ordinary glass... 相似文献
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