Optimization of parameters for deposition of ZnO films by sol gel using Taguchi method

ABSTRACT

ZnO transparent conductive films were deposited on glass substrates by sol-gel spin coating method. Taguchi method was used to find the optimal deposition parameters, three influential parameters were selected in this experiment, Concentration of zinc (II) ions. Zn²⁺, annealing temperature T_r and pre-annealing temperature T_P. By employing the analysis of variance, we found that the annealing temperature T_r and the precursor Zn²⁺ are the most influencing parameters on the properties of ZnO films. Under the optimized deposition conditions, the ZnO films showed high crystal quality, and high transmittance of 90% in the visible region.     

Characteristics of CuInS2 thin films synthesizes by chemical spray pyrolysis

Optical and Quantum Electronics - In this paper, a variable-coefficient generalized nonlinear Schrödinger equation, which can be used to describe the nonlinear phenomena in the optical fiber,...     

Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

Undoped and aluminum-doped ZnO thin films are prepared by the sol–gel spin-coating process. Zinc acetate dihydrate, ethanol and mono-ethanolamine are used as precursor, solvent and stabilizer, respectively. The atomic percentage of dopant in solution were [Al/Zn] = 1 %, 2 % and 3 %. The effect of Al doping on the optical and electrical properties of ZnO films was investigated by X-ray diffraction (XRD), Four-Point probe technique and UV–visible spectrophotometery. The results from the X-ray diffraction show that the pure ZnO thin films had a polycrystalline structure of the hexagonal Wurtzite Type. A minimum resistivity of $3.3 \times 10^{-3} \Omega \cdot \mathrm{cm}$ was obtained for the film doped with 2 mol % Al. Optical transmissions reveal a good transmittance within the visible wavelength spectrum region for all of the films. The value of the band gap is enhanced from 3.21 eV (undoped ZnO) to 3.273 eV (Al/Zn = 3 %), the increase in the band gap can be explained by the Burstein–Moss effect.     

Development of dip-coated Cu2ZnSnS4 absorber material without sulphurisation

Journal of Sol-Gel Science and Technology - Quaternary semiconductor Cu2ZnSnS4 absorber material was synthesized by the sol-gel method deposited by the dip-coating technique on ordinary glass...