Dynamic control of retrieval contrast in a Λ-type atomic system

We propose an efficient scheme for optimizing the optical memory of a sequence of signal light pulses in a system of ultracold atoms in Λ configuration. The memory procedure consists of write-in, storage, and retrieval phases. By applying a weak microwave field in the storage stage, additional phase-dependent terms are included, and the contrast of the output signal pulses can be dynamically controlled (enhanced or suppressed) through manipulating the relative phase φ between optical and microwave fields. Our numerical analysis shows that the contrast is enhanced to the most extent when φ=1.5π. In addition, the contrast is in proportion to the Rabi frequency of the microwave field with a certain relative phase.     

Dynamic control of retrieval contrast in a ∧-type atomic system

We propose an efficient scheme for optimizing the optical memory of a sequence of signal light pulses in a system of ultracold atoms in ∧ configuration.The memory procedure consists of write-in,storage,and retrieval phases.By applying a weak microwave field in the storage stage,additional phase-dependent terms are included,and the contrast of the output signal pulses can be dynamically controlled（enhanced or suppressed） through manipulating the relative phase φ between optical and microwave fields.Our numerical analysis shows that the contrast is enhanced to the most extent when φ = 1.5π.In addition,the contrast is in proportion to the Rabi frequency of the microwave field with a certain relative phase.     

三种典型结构光子晶体光纤基本特性的比较和分析

应用多极法比较和分析了相同结构参数下的正六边形、正八边形和正十边形光子晶体光纤的色散系数、色散斜率、非线性系数和限制损耗.正六边形光子晶体光纤更适合用于色散补偿和高非线性的研究,在波长0.8 μm处的非线性系数达到了0.37 m^-1·W^-1;正十边形光子晶体光纤更适合用于色散平坦和低限制损耗的研究,在波长0.8 μm处的限制损耗相对正六边形光子晶体光纤减小了约3000个数量级,在1.4—1.65 μm波长范围内,正十边形光纤的色散系数介于-0.07—0.17 p     

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after $\gamma $-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.     

非线性柱形涂层复合介质有效的直流-交流电响应

利用摄动展开方法, 研究了由圆柱形带涂层杂质随机嵌入基质所形成的非线性复合介质在外加 的带有不同频率和振幅的混合电场E₀ + E₁ sinωt+E₃ sin3ωt作用下有效的直流-交流电响应, 分别推导了复合介质在杂质核、涂层及基质区域的电势分布, 并在低杂质浓度下给出了复合介质有效的非线性响应及它们之间的关系. 关键词： 非线性柱形涂层复合介质 有效的非线性响应 外加交直流电场     

Investigation on an ultra-compact 1\times 2 polymer electro-optic switch using cross-coupling 2N+1 vertical-turning serial-coupled microrings

Generic model and thorough investigation are proposed for a novel $1\times 2$ 1 × 2 polymer electro-optic (EO) switch based on one-group $2N+1$ 2 N + 1 vertical-turning serial-coupled microrings. For realizing boxlike flat spectrum as well as low crosstalk and insertion loss, resonance order and coupling gaps are optimized. The MRR switches with $N \ge 1$ N ≥ 1 reveal favorable boxlike spectrum as when compared with the simple device with only one microring ( $N = 0$ N = 0 ). For obtaining $<-30\,\text{ dB }$ < - 30 dB crosstalk under through-state, the dependency of switching voltage on $N$ N is determined as $7.19 \times \text{ exp }(-N/0.72) + 1.72\,(\text{ V })$ 7.19 × exp ( - N / 0.72 ) + 1.72 ( V ) . Under the operation voltages of 0 V (drop state) and the predicted switching voltages (through state), the device performances are analyzed, and $1 \le N \le 10$ 1 ≤ N ≤ 10 is required for dropping the insertion loss (drop state) below 10 dB. The crosstalk of the ten devices ( $N = 1-10$ N = 1 - 10 ) are $< -19.5\,\text{ dB }$ < - 19.5 dB under drop state and $< -28.7\,\text{ dB }$ < - 28.7 dB under through state, and the insertion losses of the devices ( $N = 1-10$ N = 1 - 10 ) are $< 9.715\,\text{ dB }$ < 9.715 dB under drop state and $< 1.573\,\text{ dB }$ < 1.573 dB under through state. The device also has ultra-compact footprint size of only 0.33–1.06 mm, which is only 1/10–1/3 of those of our previously reported polymer EO switches based on directional coupler or Mach–Zehnder interferometer structures. Therefore, the proposed device is capable of highly integration onto optical networks-on-chip.     

高温应变下的晶界湮没机理的晶体相场法研究

应用晶体相场方法研究高温应变下的预熔化晶界位错湮没机理. 结果表明, 原预熔化晶界上的位错在应变作用下发生分离运动, 形成新晶界, 即亚晶界. 该过程的实质是生成了亚晶粒; 亚晶界的迁移过程的本质是亚晶粒长大、吞噬旧晶粒的过程; 亚晶界之间的湮没是亚晶粒完全吞噬旧晶粒过程的结束, 体系转变成为单个晶粒结构. 根据原子密度序参数沿x和y方向的投影值随应变量的变化特征, 可以揭示出高温应变作用下, 预熔化亚晶界相遇湮没的本质是两对极性相反的偶极子位错对发生二次湮没, 该湮没的微观过程是通过位错连续二次滑移湮没而实现的, 其湮没的速率较低温时的湮没速率要小许多.     

浙江小黄山与河南贾湖遗址出土新石器时代前期陶器化学组成的WDXRF分析研究

利用能量色散X射线荧光光谱法(energy disperse X-ray fluorescence,EDXRF)对浙江嵊州小黄山与河南舞阳贾湖两处新石器时代前期遗址出土陶器的主量元素化学组成进行了分析测定.结果显示,这两处遗址出土陶器的化学组成地域特征明显,与贾湖遗址相比,小黄山遗址陶器具有我国南方陶瓷器普遍存在的“高...