Electroluminescence kinetics ofp-n-transitions with leakages

The kinetics of the decay in the electroluminescence intensity after gating a rectangular pulse of current in the p-n-transition with inhomogeneities, in particular, accumulations of dislocations is calculated. The basic assumptions are: on gating the rectangular pulse of current, a portion of the electrons injected into the thin p-region is extracted into the n-region, whereas the same number of electrons are injected into the inhomogeneity where they recombine without emission; the intensity of nonradiative recombination on the inhomogeneity is limited by drift of majority charge carriers (by leakages). It is shown that nonradiative recombination on inhomogeneities leads to nonexponential kinetics of electroluminescence, whose instantaneous relaxation time decreases with time. Odessa State Naval Academy, 8 Didrikhson St., Odessa, 270029, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 450–453, May–June, 1998     

Astigmatism of the radiation of semiconductor stripe-geometry lasers

The effect of injection current on the intensity and angular distribution of radiation in TE- and TM-polarized modes of diode lasers with a stripe geometry and double GaAs-AlGaAs-based heterostructure is investigated. The analysis of the angular distribution of radiation revealed the nonmonotonic behavior of its astigmatism with increase in the current. The coefficient of astigmatism in the mode of lasing is substantially higher for the TE-mode than for the TM-mode. An increase in radiation astigmatism is accompanied by a decrease in the differential effectiveness and polarization degree. These specific features are explained by the interaction of the defocusing action of distribution of the refractive index n(x) in the plane of the p-n-transition with a minimum under the center of the stripe contract (at x=0) with the focusing action of the gain coefficient distribution. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 461–464, July–August, 2000.     

Solid State Conductivity and Catalytic Activity of Hexacyanoferrate(II)–Thiosemicarbazide Complexes of 3d-Metals

The temperature dependence of the resistivity of tablets of hexacyanoferrate(II)–thiosemicarbazide complexes of chromium(III), manganese(II), iron(III), cobalt(III), nickel(II), copper(II), and zinc(II) was measured in the range 20-90 °C. A relationship between the conductivity of a substance and the rate constant for the catalytic decomposition of hydrogen peroxide is established.     

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