Physical and mechanical properties of silicon near the SiO2/Si interface

The influence of an oxide coating on the strength characteristics of single-crystal silicon surface layers is investigated by the microindentation method. It is shown experimentally that a strengthened layer with a thickness of 0.2–0.4 μm and a microhardness of 20–35 GPa, which is two or three times as much as the microhardness of bulk single-crystal silicon, is present near the SiO₂/Si interface. The thickness and microhardness of this layer depends on the growth conditions of the oxide. The formation of this layer is most probably caused by interstitial silicon atoms formed near the SiO₂/Si interface during silicon oxidation.     

Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon

Silicon wafers were implanted with 40 keV B⁺ ions and then with 50 keV N⁺ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm^–2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.     

Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon

High Energy Chemistry - In this work, the effect of γ-irradiation on the adhesion properties of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon wafers...     

Ion Implantation in Diazoquinone–Novolac Photoresist

High Energy Chemistry - The processes of modifying the structural and optical properties of FP9120 and S1813 diazoquinone–novolac photoresist films on single-crystal silicon wafers beyond the...     

Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures

Journal of Applied Spectroscopy - The behavior of nitrogen in silicon dioxide films on single-crystal silicon substrates was studied by attenuated total reflection (ATR) and time-of-flight...