Studies on conventional and Sankaranarayanan–Ramasamy (SR) method grown ferroelectric glycine phosphite (GPI) single crystals

Transparent single crystals of glycine phosphite were grown by Sankaranarayanan–Ramasamy (SR) method and conventional slow evaporation solution technique (SEST) which had the sizes of 100 mm in length, 30 mm diameter and 10×11×8 mm³. The conventional slow evaporation and Sankaranarayanan–Ramasamy method grown glycine phosphite single crystals were characterized using laser damage threshold, chemical etching, Vickers microhardness, UV–vis–NIR and dielectric analysis. The laser damage threshold value was higher in SR method grown GPI crystal as against conventional method grown crystal. The SR method grown GPI has higher hardness and also higher transmittance compared to conventional method grown crystal. The chemical etching and dielectric loss measurements indicate that the crystal grown by SR method has low density of defects and low value of dielectric loss compared to conventional method grown GPI crystal.     

Effect of annealing on electrical responses of electrode and surface layer in giant-permittivity CuO ceramic

The effect of heat treatments on the electrical responses of the electrode and surface layer in a giant-permittivity CuO ceramic is investigated. It is found that the giant low-frequency relative permittivity of the CuO ceramic can be tuned by annealing in Ar and O₂—it can be reduced by annealing in Ar, and then it can be enhanced up to the initial value by annealing in O₂. The results indicate to the effect of oxygen vacancy concentration on the giant dielectric properties of the CuO ceramic. Interestingly, three sets of dielectric relaxations are observed in the O₂–annealed sample, which can be assigned as the effects of outmost surface layer, electrode, and grain boundary. Our results reveal that the giant low-frequency dielectric response in the CuO ceramic is associated with both of the interfacial polarization at the sample–electrode interface resulted from a non-Ohmic electrode contact and the outmost surface layer-inner part interface.     

A comparative study on pure,l-arginine and glycine doped ammonium dihydrogen orthophosphate single crystals grown by slow solvent evaporation and temperature-gradient method

Single crystals of pure, l-arginine and glycine doped ammonium dihydrogen orthophosphate (ADP) were grown by both the slow solvent evaporation method and the temperature-gradient method of Sankaranarayanan–Ramasamy (SR). The metastable zone width for different saturation temperatures of pure glycine and l-arginine added solutions were carried out. The grown crystals were characterized by differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), powder X-ray diffraction (XRD), optical transmission, dielectric constant, dielectric loss, and Vickers microhardness. The DSC and TG curves of the grown crystals indicated that they were stable up to 200 °C. The XRD study confirmed the structure of the grown crystal. The optical transmission analysis revealed that the pure and doped ADP crystals had very high percentage of transmission in the entire visible region. The important optical parameters such as reflectance and extinction coefficients of the grown crystals were calculated. l-arginine and glycine were used as dopants to reduce dielectric constant of ADP. The a.c. resistivity and a.c. conductivity were calculated. Dielectric loss of the doped ADP crystals grown by the SR method is lower than the doped ADP crystals grown by the conventional method. Larger hardness value for the SR method grown crystals confirmed greater crystalline perfection.