Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV

In_0.49Ga_0.51P films, both undoped and doped n- and p-type (up to 10¹⁸ cm^-3), were grown lattice matched on GaAs substrates, with different miscut angles, by Metal-Organic Vapour Phase Epitaxy (MOVPE) at different temperatures. The shift of the fundamental gap E₀, caused by “ordering effect” was measured as a function of temperature by photoluminescence. The complex refractive index = n + ik and the dielectric function = ɛ ₁ + iɛ ₂ at room temperature were determined from 0.01 to 5.5 eV by using complementary data from fast-Fourier-transform far-infrared (FFT-FIR), dispersive, and ellipsometric spectroscopies. The effect of the native oxide was accounted for and the self-consistency of the optical functions was checked in the framework of the Kramers-Kronig causality relations. In the restrahlen region the dielectric function was well fitted by classical Lorentz oscillators; in the transparent region below E₀, the refractive index was modelled by a Sellmeier dispersion relation; in the interband region the dielectric function was well reproduced by analytical lineshapes associated to seven critical points. Thus parametrized analytical expressions were obtained for the optical functions all over the spectral range, without discontinuities, to be used in the modelling and characterization of multi-layer structures, also on opaque substrates. Received 13 December 2001 Published online 25 June 2002     

Bounding,filtering and diversification in CP-based local branching

Local branching is a general purpose heuristic method which searches locally around the best known solution by employing tree search. It has been successfully used in Mixed-Integer Programming where local branching constraints are used to model the neighborhood of an incumbent solution and improve the bound. We propose the integration of local branching in Constraint Programming (CP). This integration is not simply a matter of implementation, but requires a number of significant extensions. The original contributions of this paper are: the definition of an efficient and incremental bound computation for the neighborhood, a cost-based filtering algorithm for the local branching constraint and a novel diversification strategy that can explore arbitrarily far regions of the search tree w.r.t. the already found solutions. We demonstrate the practical value of local branching in CP by providing an extensive experimental evaluation on the hard instances of the Asymmetric Traveling Salesman Problem with Time Windows.     

Synthesis and Characterization of Far‐Red/NIR‐Fluorescent BODIPY Dyes,Solid‐State Fluorescence,and Application as Fluorescent Tags Attached to Carbon Nano‐onions

A series of π‐extended distyryl‐substituted boron dipyrromethene (BODIPY) derivatives with intense far‐red/near‐infrared (NIR) fluorescence was synthesized and characterized, with a view to enhance the dye’s performance for fluorescence labeling. An enhanced brightness was achieved by the introduction of two methyl substituents in the meso positions on the phenyl group of the BODIPY molecule; these substituents resulted in increased structural rigidity. Solid‐state fluorescence was observed for one of the distyryl‐substituted BODIPY derivatives. The introduction of a terminal bromo substituent allows for the subsequent immobilization of the BODIPY fluorophore on the surface of carbon nano‐onions (CNOs), which leads to potential imaging agents for biological and biomedical applications. The far‐red/NIR‐fluorescent CNO nanoparticles were characterized by absorption, fluorescence, and Raman spectroscopies, as well as by thermogravimetric analysis, dynamic light scattering, high‐resolution transmission electron microscopy, and confocal microscopy.     

High-temperature thermal evolution of SiAs precipitates in silicon

The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×10¹⁷ As/cm² was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×10²¹ cm^–3 at 1050° C.     

Approximating Networks and Extended Ritz Method for the Solution of Functional Optimization Problems

Functional optimization problems can be solved analytically only if special assumptions are verified; otherwise, approximations are needed. The approximate method that we propose is based on two steps. First, the decision functions are constrained to take on the structure of linear combinations of basis functions containing free parameters to be optimized (hence, this step can be considered as an extension to the Ritz method, for which fixed basis functions are used). Then, the functional optimization problem can be approximated by nonlinear programming problems. Linear combinations of basis functions are called approximating networks when they benefit from suitable density properties. We term such networks nonlinear (linear) approximating networks if their basis functions contain (do not contain) free parameters. For certain classes of d-variable functions to be approximated, nonlinear approximating networks may require a number of parameters increasing moderately with d, whereas linear approximating networks may be ruled out by the curse of dimensionality. Since the cost functions of the resulting nonlinear programming problems include complex averaging operations, we minimize such functions by stochastic approximation algorithms. As important special cases, we consider stochastic optimal control and estimation problems. Numerical examples show the effectiveness of the method in solving optimization problems stated in high-dimensional settings, involving for instance several tens of state variables.     

TEM and photoluminescence characterization of porous-silicon layers from <111>-oriented p + silicon substrates

Summary A first structural investigation, carried out by transmission electron microscopy on porous-silicon samples fromp ⁺, <111>-oriented substrates is presented. The samples, which show intense visible room temperature luminescence, are composed by an interconnected network of crystalline nanostructures. Evidences of the pores propagation along the <100> directions are provided. The optical and morphological characteristics of the investigated samples are found to be much similar to those of samples coming fromp-type, non-degenerate, <100>-oriented substrates rather than those obtained from <100> substrates with comparable resistivity. This striking effect is explained by invoking different etch-limiting mechanisms during pore formation. Their relative weights are proposed to depend on the crystallographic orientation of the silicon specimen subjected to etching. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce), Torino, 12–13 October 1995.