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In recent years certain new technologies demand optically transparent high Tgpolymer materials.Some aliphatic polymers containing cyclic structure are in the marketalready and have been applied to manufacture various devices in optics industry.However,these polymers are usually of nonpolar character and their difficulties inadhesion and solubility in solvents limited their applicability in many technologies[1 ,2 ] .The polymerization of polar group-containing internal cyclic olefins by transit… 相似文献
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系统地考查了Eu3 + 在YPO4 YVO4 固溶体中的发光。当V5+ 的浓度低于 0 3 ,出现VO4 3 -离子团的蓝色发射 ;直到V5+ 的浓度等于或大于 0 3时 ,VO4 3 -离子团的蓝色发射才被Eu3 + 离子的红色发射所猝灭 ,发射主波长在 61 9nm。在真空紫外线的激发下 ,Eu3 + 在YPO4 YVO4 固溶体有较强发光 ,并随着P5+ 浓度的增加 ,Eu3 + 离子的发光增强。经过优化的组成为YP0 7V0 3 O4 ∶Eu3 + 的荧光粉在真空紫外激发下既具有较强的发光 ,又具有优良的色纯度 ,将是一种新型的良好的等离子体平板显示用荧光粉。 相似文献
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Y1.95-xGdxSiO5:Eu0.05的真空紫外光谱 总被引:2,自引:0,他引:2
利用高温固相法合成了Y1.95-xGdxSiO5:Eu0.05(x=0.6mol%)荧光体。结构测定表明所合成的荧光体为单斜晶系的X2型Y2SiO5相,空间群为B2/b。真空紫外光谱表明:随着Gd^3+含的增加,在192nm附近,出现了Gd^3+的激发峰,且此峰的强度随着Gd^3+含量的增加而增在;同时位于150 ̄185nm之间的基质吸收带的强度也增大;而位于200 ̄300nm之间的Eu的电荷迁移 相似文献
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PARK K. H. LEE J. K. HAN J. H. CHO H. S. JANG D. H. PARK C. S. PYUN K. E. JEONG JICHAI 《Optical and Quantum Electronics》1998,30(1):23-31
We report the effects of external optical feedback on the power penalty of commercial distributed feedback laser diode (DFB-LD) modules for 2.5Gbs–1 optical transmission systems. External optical feedback presented to the DFB-LD modules causes the excitation of external cavity modes, resulting in increased relative intensity noise (RIN) and intensity noise ripples at low frequency region below 500MHz. For a 10–10 bit error rate (BER), the minimum power penalty is as much as 1.25dB for a feedback ratio of –8.8dB. An excess power penalty of 0.5dB per 3dB increase in the feedback ratio was also empirically obtained. We suggest that optical isolators in 2.5Gbs–1 DFB-LD modules used in conventional optical transmission systems or WDM systems must have a peak isolation ratio of better than 54.5dB, instead of the previously recommended 30dB, for negligible power penalty induced by external optical feedback. 相似文献
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利用高温固相法合成了 Y1.95-xGdxSiO5:Eu0.05(x=0.6mol%)荧光体。结构测定表明所合成的荧光体为单斜晶系的X2型Y2SiO5相,空间群为B2/b。真空紫外光谱表明:随着Gd3+含量的增加,在192um附近,出现了Gd+的激发峰,且此峰的强度随着Gd3+含量的增加而增大;同时位于150~185nm之间的基质吸收带的强度也增大;而位于200~300nm之间的Eu的电行迁移带的强度却随着Gd3+含量的增加而降低。 相似文献
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