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Institute of Mechanics, Academy of Sciences of the Ukrainian SSR, Kiev. Translated from Prikladnaya Mekhanika, Vol. 27, No. 7, pp. 103–109, July, 1991.  相似文献   
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A new excitonic mechanism for decreasing the quantum efficiency of the photoelectric conversion process in surface-barrier structures is considered. This mechanism involves the formation of hot excitons which have a large ionization energy and are not subject to the influence of the barrier electric field. The spectral dependence of the hot photocarrier losses is derived in an explicit form from experimental data on the basis of a previously proposed model and is analyzed. This dependence has two segments with abrupt increases, which are caused by the formation of excitons in the L and X valleys of the semiconductor. Fiz. Tverd. Tela (St. Petersburg) 40, 944–945 (May 1998)  相似文献   
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It is shown that internal gettering of impurities and defects in Au-Si structures can enhance their reliability and stabilize their characteristics. Zh. Tekh. Fiz. 69, 129–131 (June 1999)  相似文献   
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The effect of annealing at room temperatures on the conductivity in the basis plane of oxygen deficient HoВа2Сu3О7?δ single crystals, tempered from a temperature of 650 °C is investigated. We determine that during the annealing process an extension of the area of the linear dependence of the resistivity ρab(T) occurs. A shift downwards of the temperature interval corresponding to the metal-to-insulator transition and a considerable transformation of the form of the resistivity transfers to the superconducting state was observed. The absolute value of the temperature that the pseudo-gap regime commences is reduced by about 20 K. The results are attributed to labile oxygen ordering without changing the concentration of oxygen in the sample. The estimation of the cluster sizes is characterized by the differences in oxygen content. We perform a comparative analysis between the experimental data with the predictions of the high temperature superconductivity cluster theory.  相似文献   
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This paper develops an effective method for calculating the bremsstrahlung cross section with allowance for the polarization mechanism. We calculate the cross section of bremsstrahlung produced in the scattering of electrons and positrons by H and Kr atoms. We also demonstrate the important role of polarization bremsstrahlung in the formation of the total emission spectrum over the entire frequency range. Zh. éksp. Teor. Fiz. 114, 458–473 (August 1998)  相似文献   
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