全文获取类型
收费全文 | 102篇 |
免费 | 0篇 |
专业分类
化学 | 16篇 |
物理学 | 86篇 |
出版年
2021年 | 2篇 |
2020年 | 2篇 |
2019年 | 5篇 |
2018年 | 2篇 |
2017年 | 1篇 |
2016年 | 2篇 |
2015年 | 1篇 |
2014年 | 4篇 |
2013年 | 3篇 |
2011年 | 1篇 |
2010年 | 4篇 |
2009年 | 1篇 |
2007年 | 3篇 |
2006年 | 2篇 |
2005年 | 3篇 |
2004年 | 3篇 |
2003年 | 2篇 |
2002年 | 1篇 |
2001年 | 5篇 |
2000年 | 2篇 |
1999年 | 4篇 |
1998年 | 2篇 |
1997年 | 9篇 |
1996年 | 4篇 |
1994年 | 2篇 |
1993年 | 1篇 |
1991年 | 2篇 |
1990年 | 3篇 |
1988年 | 2篇 |
1987年 | 1篇 |
1984年 | 2篇 |
1980年 | 2篇 |
1979年 | 2篇 |
1975年 | 1篇 |
1974年 | 1篇 |
1972年 | 1篇 |
1971年 | 1篇 |
1970年 | 1篇 |
1969年 | 6篇 |
1968年 | 1篇 |
1967年 | 3篇 |
1966年 | 1篇 |
1965年 | 1篇 |
排序方式: 共有102条查询结果,搜索用时 15 毫秒
1.
2.
É. Kh. Absalyamova Yu. I. Kol'tsov N. P. Matshina E. A. Nesmelov N. N. Soboleva 《Journal of Applied Spectroscopy》1991,54(1):79-83
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 1, pp. 103–107, January, 1991. 相似文献
3.
Weak-signal methods are used to study long-term changes in the electrophysical and photoelectric properties of Si-SiO2 systems of n- and p-type semiconductors after the action of a steady magnetic field of 102 Oe. It is found that the field electrode can produce regions characterized by the anomalous recombination, migration, and
transformation of nonequilibrium charge carriers, leading to a quasi-oscillating change in the recombination activity of the
semiconducting system. It is observed that the magnetically induced changes in the system depend on the impurity of composition
of the semiconductor. The results obtained are attributed to the decomposition of the growth structures of complexes and subsequent
clustering of the decomposition products at elastic stress sinks.
Tomsk State Academy of Control Systems and Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.
2, pp. 62–66, February, 1997. 相似文献
4.
A. V. Orlinkov T. V. Chulochnikova A. I. Nesmelov V. B. Murachev E. A. Ezhova A. M. Evtushenko 《Russian Chemical Bulletin》1996,45(5):1124-1127
The effects of the nature of halogens in the initiatingtert-butyl halide-aluminum-containing Lewis acid system on the number average molecular weightM
n
and the structure of end groups of polyisobutylene macromolecules obtained in the cationic polymerization of isobutylene in hexane at -78 °C were studied. An increase inM
n
is observed in the transition from chlorine to bromine and iodine, accompanied by a decrease in the fraction of end C=C groups and an increase in the relative content of C-Hal groups (Hal = Cl, Br, and I). When atoms of different halogens are present in the counterion, more bulky atoms preferentially participate in the formation of the end groups. The results are interpreted within the framework of the principle of hard and soft acids and bases.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 1184–1187, May, 1996. 相似文献
5.
A. I. Nesmelov A. V. Orlinkov V. B. Murachev I. S. Akhrem V. S. Byrikhin M. E. Vol'pin 《Russian Chemical Bulletin》1988,37(10):2006-2011
1. | The complexes AcBr·AlBr3 and AcBr·2AlBr3 initiate cationic polymerization of isobutylene in hydrocarbon medium at –78°C and the complex AcBr·2AlBr3 is more active. |
2. | Initiation of polymerization under the effect of the AcBr·2AlBr3 complex in hexane at –78°C takes place exclusively with Ac+ and the initiating capacity of the AcBr·AlBr3 complex is due to generation of a proton in the reaction of this complex with the monomer. |
3. | Under the effect of AcBr·AlBr3 and AcBr·2AlBr3 complexes, chain breaking takes place with the formation of the same C-Br and C=C terminal groups with similar ratios equal to 21. |
6.
V. B. Murachev A. L. Nesmelov V. S. Byrikhin E. A. Ezhova A. V. Orlinkov L. S. Akhrem M. E. Vol'pin 《Russian Chemical Bulletin》1996,45(5):1115-1119
Polymerization of isobutylene inn-hexane at -78 °C in the presence of the complex of benzoyl chloride with AIBr3 (1 : 2) was investigated. The results were compared to those obtained previously for the polymerization of this monomer induced by the complex of acetyl bromide with AlBr3. Both complexes initiate the polymerization only by acyl cations. The number average molecular weight (M
n
) of the polymer linearly increases as the degree of isobutylene conversion increases. The polymerization restarts after repeated addition of the monomer, andM
n
continues to increase linearly. The efficiency of the initiaton by the benzoyl chloride complex does not exceed 6.2 %; the reaction has the second order with respect to the initiator in the case of PhCOCI · A12Br6; and the chain-propagation rate constant is 13.9 L mol–1 s t. The use of PhCOCI Al2Br6 as the initator of the polymerization of isobutylene allows one to prepare macromolecules with very low contents of the terminal C=C double bonds and with narrow molecular weight distributions. Unlike the MeCOBr·AlBr3 complex, PhCOCl · AlBr3 does not initiate polymerization of isobutylene.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 1175–1179, May, 1996. 相似文献
7.
8.
Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1?xCdxTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K. 相似文献
9.
10.
N. N. Soboleva E. A. Nesmelov N. P. Matshina G. P. Konyukhov 《Journal of Applied Spectroscopy》1990,53(4):1067-1071
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 53, No. 4, pp. 606–611, October, 1990. 相似文献