Modification of Electrical Activity of Grain Boundaries in EFG Silicon Under Influence of Hydrogen Plasma

We investigated an influence of hydrogen plasma treatment on electrical properties of shaped silicon polycrystals. Hydrogen penetration into polycrystalline silicon is demonstrated to depend on the state of the crystal (as-grown or annealed) and type of grain boundary (general or weakly deviated from special orientations). It is found that interaction of atomic hydrogen with grain boundaries can result not only in decrease of their electrical activity, but also in increase of potential barrier height at relatively high (more than 2 × 10¹⁸ cm^–2) doses of incorporated hydrogen. This phenomenon is explained by a phenomenological model which takes into account passivation of grain boundary dangling bonds and boron atoms in the bulk as two main mechanisms controlling hydrogenation effect.     

On a property of the reducibility exponent of linear differential systems

We establish that the reducibility exponent (Differentsial’nye Uravneniya, 2007, vol. 43, no. 2, pp. 191–202) of each linear system

$$\dot x = A(t)x, x \in \mathbb{R}^n , t \geqslant 0$$

, with piecewise continuous bounded coefficient matrix A does not belong to the set of values of σ for which the perturbed system (1_A+Q) with an arbitrary piecewise continuous perturbation Q satisfying the condition \(\overline {\lim } _{t \to + \infty } t^{ - 1} \ln \left\| {Q(t)} \right\| \leqslant - \sigma \) is reducible to the original system (1 _A ) by some Lyapunov transformation.

     

Effective p-type photocurrent sensitization of n-Bi2O3 with p-CuBi2O4 and p-CuO: Z-scheme photoelectrochemical system

Journal of Solid State Electrochemistry - Nanostructured n-Bi2O3/p-CuBi2O4/p-CuO photocathodes with incident photon-to-current conversion efficiency IPCEmax = 70%...     

The Use of the Major Component (Solvent) As an Internal Standard in the Gas-Chromatographic Determination of Impurities

A gas-chromatographic method was proposed for determining impurities using the major component as an internal standard. This method exhibits sufficiently high performance characteristics.     

Preparation and electrical properties of cobalt-containing carbon fibers

Carbon fibers with inclusions of cobalt nanoclusters are prepared by heat treatment of carboxylated cellulose containing cobalt cations. The influence of the heat treatment conditions on the structuring of the carbon matrix and cobalt clusters, the magnetization hysteresis loop, the temperature dependence of the conductivity, and the magnetoresistance is investigated. It is established that the cobalt-containing carbon fibers heat treated at T _M =700 and 900°C possess superparamagnetic and ferromagnetic properties, respectively. It is shown that fibers heat treated under different conditions are characterized by different conduction mechanisms and can exhibit anisotropic and giant magnetoresistances and also the effects associated with the influence of magnetic field on the processes of weak localization and spin-orbit scattering.     

Size-dependent photocurrent switching in chemical bath deposited CdSe quantum dot films

Journal of Solid State Electrochemistry - Size-dependent photocurrent switching has been investigated in chemical bath deposited CdSe quantum dot (QD) films with band gaps 2.26, 2.09, and...     

Electrochemistry of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattice

Journal of Solid State Electrochemistry - Selective electrochemical transformations of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattices can be of interest as a means of thermoelectric materials...     

Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2semiconductors

We reveal the intrinsic band‐to‐band photoluminescence (PL) in Tl‐based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for k ⊥ c , where c is the layers stacking axis, and is dependent on polarization. In TlGaSe₂, the band edge absorption spectra were determined at different excitation geometry by using techniques of depth‐resolved free‐carrier absorption (FCA) and photoacoustic response (PAR). A strong absorption enhancement is detected in a large spectral area in the near‐surface region lateral to ab plane. The band‐to‐band absorption enhancement is the most probable cause for high PL intensity. The near‐surface behavior, different from the bulk, might implement useful photonic functionality at room temperature (RT). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)