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1.
A comparative kinetic study was carried out and formal kinetic equations were derived for the chemical deposition of cadmium sulfide from aqueous solutions containing various cadmium complexes onto a glass-ceramic substrate by thiourea under conditions of spontaneous nucleation and interfacial area control. The elemental composition and morphology of the resultant films were examined, on this basis their nanostructure nature was confirmed, taking into account the data on crystallite size analysis.  相似文献   
2.
Russian Journal of Physical Chemistry A - The potentiometric titration of tin chloride SnCl2 is performed in the concentration range of 0.00009–1.1 mol/L with a solution of sodium hydroxide...  相似文献   
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Boundary conditions and ranges of the formation of indium(III) sulfide and selenide upon precipitation by thiocarbamide and selenocarbamide are determined. Potentiometric titration of indium chloride (InCl3) in the concentration range of 0.0001 to 0.100 mol/L by a solution of sodium hydroxide is performed. It is found that the following pH ranges are optimal for In2S3 and In2Se3 film precipitation: from 3.0 to 4.5 and from 9.0 to 14.0. Indium selenide layers 100 to 300 nm thick are prepared on vitroceramic by hydrochemcial precipitation.  相似文献   
5.
Maskaeva  L. N.  Yurk  V. M.  Markov  V. F.  Voronin  V. I. 《Physics of the Solid State》2020,62(10):1949-1959
Physics of the Solid State - Comparative experimental data, using dynamic light scattering methods, scanning electron and atomic force microscopy, on the composition, crystal structure,...  相似文献   
6.
Calculation equations that allow one to determine the boundary conditions of the formation of solid-phase metal sulfides and selenides with different valences according to the decomposition constants of thio- and selenourea and the kinetic dependence of the accumulation of chalcogenide ions in the reaction system are proposed. The contribution from the crystallization factor to the determination of the boundary conditions of the formation of the solid phase is shown with allowance for the nucleation of metal chalcogenide. The calculation equations determining the boundary conditions of the formation of the main admixture phases upon the hydrochemical deposition of chalcogenides, metal hydroxide, and cyanamide are derived.  相似文献   
7.
The growth mechanism of PbSe y S1 ? y films has been studied upon chemical deposition from aqueous solutions using scanning probe microscopy. A comparative morphological analysis of layers deposited at the initial growth stages and the use of fractal formalism shows that the formation of films of PbS, PbSe, and PbSe y S1 ? y substitutional solid solutions involves cluster-cluster aggregation with self-organization elements.  相似文献   
8.
A hydrochloric acid solution of hydrogen peroxide was suggested for etching lead sulfide films. The solubility of lead sulfide in relation to the hydrochloric acid concentration in the etching solution was calculated using thermodynamic analysis, taking into account the stability of lead complex species. The kinetics of hydrogen peroxide decomposition in the hydrochloric acid solution was studied, and the formal rate equation of the process was constructed.  相似文献   
9.
Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.  相似文献   
10.
Semiconductor sensing elements based on iodide-doped lead sulfide were developed for determining nitrogen oxides (NO, NO2). The dynamic and relaxation behavior and the selectivity of the sensors developed were studied.  相似文献   
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