Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Recent Developments in Synchrotron Mössbauer Reflectometry

Hyperfine Interactions - Synchrotron Mössbauer Reflectometry (SMR), the grazing incidence nuclear resonant scattering of synchrotron radiation, can be applied to perform depth-selective phase...     

High-efficiency continuous-wave diode-pumped Tm:Ho:LuAG laser at 2.1 μm

Continuous Wave (CW) laser action has been observed from a Ho:Tm:LuAG rod at 2.1 m pumped by a diode laser at 785 nm in the temperature range of 77–200 K. The maximum power observed was 1.38 W at an incident power of 4 W at a crystal temperature of 77 K. The optical-to-optical conversion efficiency was observed to be 35.6% at a threshold power of 0.2 W with a 95% output coupling mirror.