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1.
Q. Gong R. N tzel P.J. van Veldhoven T.J. Eijkemans J.H. Wolter 《Journal of Crystal Growth》2005,280(3-4):413-418
We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux. 相似文献
2.
A. M. Yakunin A. Yu. Silov P. M. Koenraad W. Van Roy J. De Boeck J. H. Wolter 《Superlattices and Microstructures》2003,34(3-6):539
An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn2+3d5+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state. 相似文献
3.
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5.
Michael Leuck Rubina Giare Matthias Paul Nicole Zien Andreas Wolter 《Tetrahedron letters》2004,45(2):317-320
A novel improved controlled pore glass (CPG) support based on the 2-(hydroxymethyl)-6-nitrobenzoyl (HMNB) protecting group was developed for the synthesis of 3′-aminoalkylated oligonucleotides. The release of oligonucleotides with free 3′-amino groups from the support is complete within 2 h at 55 °C in concentrated ammonia. 相似文献
6.
We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructure with a high mobility 2-dimensional electron gas (2DEG) in a thin (55 nm) GaAs layer. The optically induced gate voltage between the front gate and the 2DEG is sensitive to excess electron concentrations below 107 cm−2. In the gate voltage spectrum we observe a peak below the bandgap energy of GaAs, which is not observed in the photocurrent, luminescence or excitation spectra. Due to the extremely high sensitivity of this technique we attribute this below bandgap signal to very weak absorption lines below the GaAs bandgap energy by impurity bands or defect absorption. The fall-off of the below bandgap signal varies as exp (hω/E0), where E0 is an indicative for the quality of the heterostructure. 相似文献
7.
M. Quitzau M. Wolter V. Zaporojtchenko H. Kersten F. Faupel 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2010,58(3):305-310
Hexamethyldisiloxane (HMDSO) films were deposited on polyethylene (PE, (C2H4)n) powder by hollow cathode glow
discharge. The reactive species in different HMDSO/Ar plasmas were studied by optical emission spectroscopy (OES). Increasing
the HMDSO fraction in the gas mixture additional compounds like CHx, OH, SiC and SiO can be identified. After deposition the
formed silicon and carbon containing groups (C–O, C=O, SiC and SiO) on the PE powder surface have been analyzed by X-ray
photoemission spectroscopy (XPS). Changes in wettability depending on the HMDSO fraction were investigated by contact angle
measurements (CAM). The free surface energy of the PE powder decreases with increasing HMDSO fraction in the process gas and
encapsulation of the powder particles occurs. An aging effect of the plasma treated PE surface was observed depending on the
process
gas composition. The higher the HMDSO fraction the less is the aging effect of the plasma treated PE surface. 相似文献
8.
T. I. Mikhailova B. Erdemchimeg G. Kaminski A. G. Artyukh M. Colonna M. Di Toro I. N. Mikhailov Yu. M. Sereda H. H. Wolter 《Bulletin of the Russian Academy of Sciences: Physics》2009,73(6):852-857
The asymmetry of velocity distributions of projectile-like fragments produced in heavy ion collisions is considered. The calculations
performed in the transport model approach (Vlasov kinetic equation with the collision term) are compared with the experimental
data for the 22Ne (40MeV/nucleon) + 9Be and 18O (35 MeV/nucleon) + 9Be(181Ta) reactions. It is found that the velocity distributions contain two components: a direct component centered at the beam
velocity and a dissipative component at lower energies, leading to asymmetry of velocity distributions. The direct component
is interpreted empirically within the Goldhaber model, and the centroids and widths σ0 of the distributions for each fragment are extracted. It is found that value of σ0 derived from experimental data is smaller by a factor of 2 than the theoretical one. The dissipative (also called deep inelastic)
component is described well by the transport calculations. It is shown that the ratio of yields of direct and dissipative
components, which determines the asymmetry of velocity distributions, depends on shape of the deflection function.
Original Russian Text ? T.I. Mikhailova, B. Erdemchimeg, G. Kaminski, A.G. Artyukh, M. Colonna, M. Di Toro, I.N. Mikhailov,
Yu.M. Sereda, H.H. Wolter, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No.
6, pp. 898–903. 相似文献
9.
Kemerink M Offermans P van Duren JK Koenraad PM Janssen RA Salemink HW Wolter JH 《Physical review letters》2002,88(9):096803
We demonstrate that the soft nature of organic semiconductors can be exploited to directly measure the potential distribution inside such an organic layer by scanning-tunneling microscope (STM) based spectroscopy. Keeping the STM feedback system active while reducing the tip-sample bias forces the tip to penetrate the organic layer. From an analysis of the injection and bulk transport processes it follows that the tip height versus bias trace obtained in this way directly reflects the potential distribution in the organic layer. 相似文献
10.
Modulations in the absorption of quasi-monochromatic light from atoms prepared in a coherent superposition of atomic states are derived semiclassically. Explicit expressions are given for the case of fine or hyperfine levels and for the photoionization of Rydberg states. 相似文献