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1.
Unsteady, axisymmetric stagnation flow about a circular cylinderis examined when the far-field flow is a periodic function oftime with a fixed time average and an oscillatory part of prescribedamplitude and frequency. Solutions are computed for arbitraryvalues of the Reynolds number, quantifying the effects of surfacecurvature, and a frequency parameter based on the period ofthe far-field flow. It is found that solutions remain regularand periodic provided that the far-field amplitude lies belowa critical value. Above this value, solutions terminate in afinite-time singularity. The blow-up time is delayed by increasingthe curvature of the surface. These results are corroboratedby asymptotic predictions valid in the limits of small and largeamplitude and frequency. For large Reynolds number, the problemreduces to the two-dimensional stagnation-point flow againsta plane wall studied by previous authors.  相似文献   
2.
31P solid-state nuclear magnetic resonance (NMR) spectra of 12 metal-containing selenophosphates have been examined to distinguish between the [P(2)Se(6)](4-), [PSe(4)](3-), [P(4)Se(10)](4-), [P(2)Se(7)](4-), and [P(2)Se(9)](4-) anions. There is a general correlation between the chemical shifts (CSs) of anions and the presence of a P[bond]P. The [P(2)Se(6)](4-) and [P(4)Se(10)](4-) anions both contain a P[bond]P and resonate between 25 and 95 ppm whereas the [PSe(4)](3-), [P(2)Se(7)](4-), and [P(2)Se(9)](4-) anions do not contain a P[bond]P and resonate between -115 and -30 ppm. The chemical shift anisotropies (CSAs) of compounds containing [PSe(4)](3-) anions are less than 80 ppm, which is significantly smaller than the CSAs of any of the other anions (range: 135-275 ppm). The smaller CSAs of the [PSe(4)](3-) anion are likely due to the unique local tetrahedral symmetry of this anion. Spin-lattice relaxation times (T(1)) have been determined for the solid compounds and vary between 20 and 3000 s. Unlike the CS, T(1) does not appear to correlate with P-P bonding. (31)P NMR is also shown to be a good method for impurity detection and identification in the solid compounds. The results of this study suggest that (31)P NMR will be a useful tool for anion identification and quantitation in high-temperature melts.  相似文献   
3.
4.
Sb4Te3 and Sb8Te9 are members of the homology (Sb2Te3)m.(Sb2)n, with structures consisting of Sb2- and Sb2Te3-type slabs stacked along [001]; electrical conductivity and thermopower are reported for several members of this family.  相似文献   
5.
The nature of the thermoelectric materials Ag(1-x)Pb(m)SbTe(m+2) or LAST-m materials (LAST for Lead Antimony Silver Tellurium) with different m values at the atomic as well as nanoscale was studied with powder/single-crystal X-ray diffraction, electron diffraction, and high-resolution transmission electron microscopy. Powder diffraction patterns of different members (m = 0, 6, 12, 18, infinity) are consistent with pure phases crystallizing in the NaCl-structure-type (Fmm) and the proposition that the LAST family behaved as solid solutions between the PbTe and AgSbTe2 compounds. However, electron diffraction and high resolution transmission electron microscopy studies suggest the LAST phases are inhomogeneous at the nanoscale with at least two coexisting sets of well-defined phases. The minority phase which is richer in Ag and Sb is on the nanosized length scale, and it is endotaxially embedded in the majority phase which is poorer in Ag and Sb. Moreover, within each nanodomain we observe extensive long range ordering of Ag, Pb, and Sb atoms. The long range ordering can be confirmed by single crystal X-ray diffraction studies. Indeed, data collections of five different single crystals were successfully refined in space groups of lower symmetry than Fmm including P4/mmm and Rm. The results reported here provide experimental evidence for a conceptual basis that could be employed when designing high performance thermoelectric materials and dispel the decades long belief that the systems (AgSbTe2)(1-x)(PbTe)x are solid solutions.  相似文献   
6.
Two low-dimensional compounds, KSnAsS(5) and K(2)SnAs(2)S(6), were prepared using liquid polythioarsenate salts, and the results differ from those obtained with the well studied thiophosphate flux. KSnAsS(5) crystallizes in the orthorhombic space group Pbam with cell parameters of a = 8.136(2) A, b = 13.784(4) A, c = 7.428(2) A. KSnAsS(5) features the unusual pyramidal species [AsS(2)(S(2))](3-). K(2)SnAs(2)S(6) crystallizes in the trigonal space group P3 macro with cell parameters a = 6.717(5) A, b = 7.204(8) A, gamma = 120 degrees. The compounds were obtained by controlling the Lewis basicity of the K(2)S/As(2)S(3)/S flux. The optical, thermal, and spectroscopic properties of the compounds are reported.  相似文献   
7.
Mesostructured chalcogenide-based materials with long-range order and semiconducting properties can be prepared using suitable molecular building blocks, linkage metal ions and surfactant molecules. In this paper we present surfactant templated, open framework platinum tin selenide and telluride materials assembled using K4SnQ4 (Q = Se, Te) salts and K2PtCl4 as precursors and a study of pore and wall organization. We find that materials prepared in water exhibit disordered pore organization, whereas those prepared in formamide are long-range ordered with hexagonal symmetry. In formamide the [SnQ4]4- anions undergo condensation-oligomerization reactions that produce different chalcogenido molecular species, whereas in water the anions remain intact. In addition to solvent, the pore organization and overall quality of the mesostructured materials strongly depend on the surfactant molecules, i.e., chain length and headgroup size. For example, highly ordered mesostructured platinum tin selenides with hexagonal symmetry were obtained using the hydroxyl-functionalized surfactants CnH2n+1N(CH3)(CH2CH2OH)2Br (n = 16, 18, and 20), but when the headgroup was triethylammonium, hexagonal pore order was achieved only for n = 20 and not for n = 16 and 18. The experimental results imply that in order to achieve highly ordered chalcogenide frameworks a single building anionic block might be insufficient. Finally, we also report the first examples of hexagonal mesostructured Pt/Sn/Te materials based on K4SnTe4 as the precursor. The tellurides behave differently for their selenium analogues and have very low energy band gaps, in the range 0.5-0.7 eV.  相似文献   
8.
The highly anisotropic material CsBi(4)Te(6) was prepared by the reaction of Cs/Bi(2)Te(3) around 600 degrees C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) A, b = 4.4025(1) A, c = 14.5118(3) A, beta = 101.480(1) degrees, V = 3250.75(11) A(3), and Z = 8. The final R values are R(1) = 0.0585 and wR(2) = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi(4)Te(6)] anionic layers and Cs(+) ions residing between the layers. The [Bi(4)Te(6)] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) A. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CsBi(4)Te(6) can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. SbI(3) doping resulted in p-type behavior and a maximum power factor of 51.5 microW/cm.K(2) at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 microW/cm.K(2) at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi(4)Te(6) and comparisons to those of p-type.  相似文献   
9.
An unusual compound, Ba4SiSb2Se11, was discovered from a reaction of Ba/Th/Sb/Se. It is assumed that Si was extracted from the silica reaction tube. It forms as silver needlelike crystals in the polar space group Cmc2(1) with a = 9.3981(3) A, b = 25.7192(7) A, c = 8.7748(3) A, and Z = 4. A rational synthesis has been devised at 600 degrees C. The compound is composed of Ba2+ ions stabilized between infinite one-dimensional [SiSb2Se11]8- chains running parallel to the a axis. Each chain is composed of a [SbSe2]- infinity backbone with [SiSe4]4- tetrahedra chelating every other Sb atom from the same side of the backbone. The V-shaped triselenide groups, (Se3)2-, are attached to the rest of the Sb atoms in the chain through one of their terminal Se atoms. The compound has a band gap of 1.43 eV. The Raman spectrum shows a broad shift at 247 cm-1 and a shoulder around 234 cm-1, which are related to the Se-Se vibration of the triselenide groups and/or the Si-Se vibrations of the [SiSe4]4- groups. The compound decomposes at 522 degrees C.  相似文献   
10.
Two quaternary silver selenoarsenates Cs3AgAs4Se8 (I) and CsAgAs2Se4 (II) have been discovered by methanothermal reaction of Li3AsSe3 with AgBF4 in the presence of the respective alkali metal sources Cs2CO3 and CsCl. Orange crystals of Cs3AgAs4Se8 (I) were formed after reaction at 120 degrees C for 72 h, whereas red CsAgAs2Se4 (II) was obtained under slightly different conditions at 140 degrees C for 70 h. Both compounds possess novel two-dimensional (2D) polyanions consisting of infinite 1 infinity[AsSe2]- chains that are interconnected by Ag+ ions in different coordination patterns. In I, a double layer of 1 infinity[AsSe2]- chains is bridged by distorted trigonal planar coordinated Ag+ atoms to form a 2 infinity[AgAs4Se8]3- layer with a thickness of about 11.3 A. The nonbonding Ag...Ag distances are about 4.220 A, and large cavities within the layers accommodate for three of the four crystallographic Cs+ cations. The double amount of Ag+ atoms per AsSe2 chain unit in II leads to simple layers 2 infinity[AgAs2Se4]- [=[Ag2As4Se8]2-] in which the Ag+ atoms are arranged in rows between the 1 infinity[AsSe2]- chains, with alternating Ag...Ag distances of 3.053(3) and 3.488(3) A. Hereby the 1 infinity[AsSe2]- polyanions show a disorder within the central (-As-Seb)- chain (b = bridging), while the positions of the terminal Se atoms (Set) remain unaffected. The thermal, optical, and spectroscopic properties of the compounds are reported. Both I and II melt with decomposition and are wide band gap semiconductors with values of 2.07 and 1.79 eV, respectively. Raman spectroscopic data show typical band patterns expected for infinite [AsSe2]- chains. Crystal Data: Cs3AgAs4Se8 (I), monoclinic, C2/c, a = 25.212(2) A, b = 8.0748(7) A, c = 22.803(2) A, beta = 116.272(2) degrees, Z = 8; CsAgAs2Se4 (II), monoclinic, P2(1)/n, a = 10.9211(1) A, b = 6.5188(2) A, c = 13.7553(3) A, beta = 108.956(1) degrees, Z = 4.  相似文献   
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