The largest strongly consecutive repeat-free code

Answering a question of Körner and Simonyi, this paper gives a strongly consecutive repeat-free code of maximal size in [b]ⁿ.     

Magnetism in electron-doped copper oxides

We report muon spin relaxation/rotation measurements on sintered powder samples of Nd_2−x Ce _x CuO_4−y and a large single crystal of Nd₂CuO_4−y . We find an electronic phase diagram which is quite similar to that of hole-doped superconductors such as La_2−x Sr _x CuO_4−y , although the doping of electrons into the system is less efficient in destroying the static moments on the copper spins. Static magnetic order in Nd₂CuO_4−y appears below about 250 K, and two spin reorientations are seen atT=75 K andT=35 K. Measurements of the magnetic field penetration depth have been unsuccessful due to the rare-earth paramagnetism of these materials.     

μSR studies of heavy fermion systems

We have performed both zero field and high transverse field measurements at dilution refrigerator temperatures on a number of heavy electron systems, examining the superconducting and magnetic properties of these interesting materials. Among the materials studied to date are UBe₁₃, URu₂Si₂ and U₆Fe. The magnetic field penetration depth in the superconducting state of UBe₁₃ is greater than 10000 Å, as no increase in the transverse field relaxation rate is observed belowT _c . A sharp increase in the precession frequency is seen, starting atT _c . This frequency shift shows little temperature dependence at low temperature; we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we have observed relaxation in high transverse field due to the formation of a flux lattice in U₆Fe, a material where the electron effective mass is rather lighter than in other heavy fermion systems. The relaxation exhibits a sharp onset atT _c=3.9 K, and is flat at low temperatures as expected for a conventional superconductor.     

Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.     

Total internal reflection-based biochip utilizing a polymer-filled cavity with a micromirror sidewall

A total internal reflection (TIR)-based biochip utilizing a polymer-filled cavity with a micromirror sidewall has been designed and fabricated. The implementation of the micromirror sidewall cavity facilitates precise alignment of the excitation light beam into the system. The incident angle of illumination can be easily modified by selecting polymers of different indices of refraction while optical losses are minimized. The design enables the hybrid, vertical integration of a laser diode and a CCD camera, resulting in a compact optical system. Brownian motion of fluorescent microspheres and real-time photobleaching of rhodamine 6G molecules is demonstrated. The proposed TIR-based chip simplifies current TIR optical configurations and could potentially be used as an optical-microfluidic platform for an integrated lab-on-a-chip microsystem.     

Magnetic penetration depth in V3Si and LiTi2O4 measured by μSR

Muon spin relaxation (SR) studies have been performed in the normal spinel LiTi₂O₄ and the A-15 superconductor V₃Si to measure the magnetic penetration depth . The relaxation rate(T) 1/² in field-cooled measurements shows a sharp increase belowT _c followed by saturation at low temperatures in both systems. This feature implies an isotropic energy gap without anomalous zeros, and most likelys-wave pairing. The low temperature penetration depth (T 0) is determined to be 2100Å for LiTi₂O₄ and 1300Å for V₃Si respectively. Assuming a clean limit relation ^–2 n _s /m ^*, we derive the Fermi temperatureT _F n _s/ ^2/3 m ^* from the relaxation rate and the Sommerfeld constant asT _F ^3/4–1/4. Unlike conventional superconductors, both LiTi₂O₄ and V₃Si have a large ratio ofT _c /T _F 0.01, only slightly smaller than those ratios in more exotic superconductors.We thank C. Ballard and K. Hoyle for technical assistance. Work at Columbia University is supported by NSF Grant No. DMR-89-13784 and Packard Foundation (YJU). Ames Laboratory is operated for the U. S. Department of Energy by Iowa State University under Contract No. W-7405-Eng-82. Work at Ames was supported by the Director for Energy Research, Office of Basic Energy Sciences.