Determination of Retention Factors of s-Triazines Homologous Series in Water Using a Numerical Method Basing on Ościk's Equation

The retention factors in pure water for a homologous series of s-triazines were calculated by a numerical method basing on Ościk's equation and were correlated with log k _w values obtained by linear and parabolic extrapolation. Chromatographic data (log k _w ) were compared with the software-calculated partition coefficients in the n-octanol/water system (Alog P, IAlog P, clog P, log P _Kowin , xlog P, log P _ACD and log P _Chem.Off.) as alternative hydrophobicity indices. The effect of organic modifier (methanol and acetonitrile) and its concentration in the mobile phase used for log k _w evaluation were investigated. Very good linear correlations were found between log k _w values calculated by the numerical method and log P _ACD , log P _Chem.Off . and clog P values, independent of organic modifier type.

     

In situ identification of organic components of ink used in books from the 1900s by atmospheric pressure matrix assisted laser desorption ionization mass spectrometry

Transport of N, O, and Ti during dc magnetron sputtering deposition of nanoscopic TiN/Ti and TiN structures on plasma nitrided M2 tool steel, as well as transport of metallic species composing the plasma nitrided steel substrates were investigated. N and O depth distributions were determined with subnanometric resolution using narrow resonant nuclear reaction profiling, whereas Ti was profiled, also with subnanometric depth resolution, by medium energy ion scattering. The surface elementary compositions of the TiN/Ti/nitrided steel and TiN/nitrided steel structures were determined by low energy ion scattering. The chemical compounds formed during deposition were accessed by X-ray photoelectron spectroscopy, indicating the presence of TiN, TiO₂, Ti oxynitrides, as well as other metallic nitrides and oxynitrides, but no metallic Ti was observed. Owing to the observed intensive atom mobility, the compositions of the deposited films on plasma nitrided steel structures varied continuously on a nanoscopic scale, from the core of the steel substrate to the bulk of the stoichiometric TiN films. The Ti interlayer assists interdiffusion of all species, in contrast to the TiN film layer, which is known to be a diffusion barrier. The improved adhesion of TiN hard coatings to plasma nitrided steel under working conditions is discussed in terms of the gradual compositional change around the interfaces and the atomic mobility during their formation.     

The Effect of Stationary Phase Type and Mobile Phase pH on the Separation of Some Catecholamines

JPC – Journal of Planar Chromatography – Modern TLC - The catecholamines are very important in the control and regulation of a variety of functions acting as neurotransmitters in both...     

OPLC Investigation of Formaldehyde Levels in the Hard Tissues of the Teeth in Rare Pathological Cases

JPC – Journal of Planar Chromatography – Modern TLC - Levels of formaldehyde, formed within the cells of plants, animals, and man, are related to the physiological state of an organism....     

Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC

Ir/4H-SiC and IrO₂/4H-SiC Schottky diodes are reported in terms of different methods of surface pretreatment before contact deposition. In order to find the effect of surface preparation processes on Schottky characteristics the SiC wafers were respectively cleaned using the following processes: (1) RCA method followed by buffered HF dip. Next, the surface was oxidized (5.5 nm oxide) using a rapid thermal processing reactor chamber and circular geometry windows were opened in the oxide layer before metallization deposition; (2) the same as sequence (1) but with an additional in situ sputter etching step before metallization deposition; (3) cleaning in organic solvents followed by buffered HF dip. The I-V characteristics of Schottky diodes were analyzed to find a correlation between extracted parameters and surface treatment. The best results were obtained for the sequence (1) taking into account theoretical value of Schottky barrier height. The contacts showed excellent Schottky behavior with ideality factors below 1.08 and barrier heights of 1.46 eV and 1.64 eV for Ir and IrO₂, respectively. Very promising results were obtained for samples prepared using the sequence (2) taking into account the total static power losses because the modified surface preparation results in a decrease in the forward voltage drop and reverse leakage current simultaneously. The contacts with ideality factor below 1.09 and barrier height of 1.02 eV were fabricated for Ir/4H-SiC diodes in sequence (2).